Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: TO263 OSG60R099KSZF
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: Overclocking
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month
• Package Size: 35.00cm * 35.00cm * 26.00cm
• Package Gross Weight: 2.000kg

Product Description

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.


Features
O Low RDS(ON) & FOM
O Extremely low switching loss
O Excellent stability and uniformity
O Ultra-fast and robust body diode


Applications
O PC power
O Telecom power
O Server power
O EV Charger
O Motor driver


Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	650	V
ID, pulse	108	A
RDS(ON), max @ VGS =10V	99	mΩ
Qg	66.8	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	600	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	36	A
Continuous drain current1) , TC=100 °C		22.8
Pulsed drain current2) , TC=25 °C	ID, pulse	108	A
Continuous diode forward current1) , TC=25 °C	IS	36	A
Diode pulsed current2) , TC=25 °C	IS, pulse	108	A
Power dissipation3) , TC=25 °C	PD	278	W
Single pulsed avalanche energy5)	EAS	1000	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.45	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	600			V	VGS =0 V, ID =1 mA
		650				VGS =0 V, ID =1 mA, Tj =150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS =VGS , ID =1 mA
Drain-source on- state resistance	RDS(ON)		0.082	0.099	Ω	VGS =10 V, ID=18 A
			0.20			VGS =10 V, ID=18 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			10	A	VDS =600 V, VGS =0 V
Gate resistance	RG		8		Ω	ƒ=1 MHz /  Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		3917.5		pF	VGS =0 V, VDS =50 V, ƒ=100 KHz
Output capacitance	Coss		203.3		pF
Reverse transfer capacitance	Crss		9.0		pF
Turn-on delay time	td(on)		48.3		ns	VGS =10 V, VDS =400 V, RG=2 Ω, ID=20 A
Rise time	tr		77.0		ns
Turn-off delay time	td(off)		90.9		ns
Fall time	tf		4.6		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		66.8		nC	VGS =10 V, VDS =400 V, ID=20 A
Gate-source charge	Qgs		16.6		nC
Gate-drain charge	Qgd		28.7		nC
Gate plateau voltage	Vplateau		6.7		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.4	V	IS=36 A, VGS =0 V
Reverse recovery time	trr		146.5		ns	IS=20 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.0		C
Peak reverse recovery current	Irrm		12.8		A

Note
1)     Calculated continuous current based on maximum allowable junction temperature.
2)     Repetitive rating; pulse width limited by max. junction temperature.
3)     Pd is based on max. junction temperature, using junction-case thermal resistance .
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=60 mH, starting Tj =25 °C.

 

Ordering Information
 

Package Type	Units/ Reel	Reels / Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO263-J	800	1	800	10	8000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OSG60R099KSZF	TO263	yes	yes	yes

Supply Chain

Green Product Declaration