LED Lighting 3-Phase Vienna Topology EV Charging Piles Vds, Tj (max) 700V ID, Osg65r035htf To247 High Voltage Power Mosfet

• Manufacturing Technology: Optoelectronic Semiconductor
• Material: Element Semiconductor
• Type: N-type Semiconductor
• Package: SMD
• Signal Processing: Digital
• Application: Solar Cell
• Model NO.: OSG65R035HTF TO247
• Model: ST
• Batch Number: 2010+
• Brand: Orimental
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications: PC Power
• Industries: LED Lighting
• Transport Package: Air
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20kkkk/Monthly

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.

Features     
    Low RDS(on) & FOM
    Extremely low switching loss
    Excellent stability and uniformity

Applications
    PC power
    LED lighting
    Telecom power
    Server power
    EV Charger
    Solar/UPS


Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	240	A
RDS(ON) , max @ VGS=10V	35	mΩ
Qg	153.6	nC

Marking Information
 

Product Name	Package	Marking
OSG65R035HTF	TO247	OSG65R035HT

 

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	600	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	80	A
Continuous drain current^1), TC=100 °C		50
Pulsed drain current^2), TC=25 °C	ID, pulse	240	A
Continuous diode forward current^1), TC=25 °C	IS	80	A
Diode pulsed current^2), TC=25 °C	IS, pulse	240	A
Power dissipation^3), TC=25 °C	PD	455	W
Single pulsed avalanche energy^5)	EAS	1850	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

 

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.27	°C/W
Thermal resistance, junction-ambient^4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	600			V	VGS=0 V, ID=1 mA
		650				VGS=0 V, ID=1 mA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.9		3.9	V	VDS=VGS, ID=2 mA
Drain-source on- state resistance	RDS(ON)		0.024	0.028	Ω	VGS=10 V, ID=40 A
			0.06			VGS=10 V, ID=40A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=600 V, VGS=0 V
Gate resistance	RG		2.2		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		7373		pF	VGS=0 V, VDS=50 V, ƒ=100 KHz
Output capacitance	Coss		504		pF
Reverse transfer capacitance	Crss		17		pF
Turn-on delay time	td(on)		42.5		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		71		ns
Turn-off delay time	td(off)		126.6		ns
Fall time	tf		3.7		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		181.8		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		36.5		nC
Gate-drain charge	Qgd		49.5		nC
Gate plateau voltage	Vplateau		5.5		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		584		ns	VR=400 V, IS=40 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		12.8		μC
Peak reverse recovery current	Irrm		39.8		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=100 V, VGS=10 V, L=79.9 mH, starting Tj=25 °C.

Ordering Information
 

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO247-C	30	11	330	6	1980
TO247-J	30	20	600	5	3000

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
OSG60R028HTF	TO247	yes	yes	yes

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.