O247 Osg65r074ht3zf Vds-700V ID-138A RDS (ON) -74milliohm Qg-65.7nc Solar Invertor Super Charger Power Mosfet

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO247 OSG65R074HT3ZF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      PC power
      Server power supply
      Telecom
      Solar invertor
      Super charger for automobiles

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	138	A
RDS(ON), max @ VGS =10V	74	mΩ
Qg	65.7	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	46	A
Continuous drain current1) , TC=100 °C		29
Pulsed drain current2) , TC=25 °C	ID, pulse	138	A
Continuous diode forward current1) , TC=25 °C	IS	46	A
Diode pulsed current2) , TC=25 °C	IS, pulse	138	A
Power dissipation3) , TC=25 °C	PD	379	W
Single pulsed avalanche energy5)	EAS	705	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	650			V	VGS =0 V, ID =1 mA
		700				VGS =0 V, ID =1 mA, Tj =150 °C
Gate threshold voltage	VGS(th)	3.0		5.0	V	VDS =VGS , ID =1 mA
Drain-source on-state resistance	RDS(ON)		68	74	mΩ	VGS =10 V, ID=23.5 A
			178			VGS =10 V, ID=23.5 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			10	μA	VDS =650 V, VGS =0 V
Gate resistance	RG		8.3		Ω	ƒ=1 MHz, Open drain

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		65.7		nC	VGS =10 V, VDS =400 V, ID=20 A
Gate-source charge	Qgs		24.5		nC
Gate-drain charge	Qgd		19.4		nC
Gate plateau voltage	Vplateau		7		V

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=80 mH, starting Tj =25 °C.


Ordering Information

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO247-P	30	11	330	6	1980
TO247-J	30	20	600	5	3000

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
OSG65R074HT3ZF	TO247	yes	yes	yes

Supply Chain

Green Product Declaration