• To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet
  • To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet
  • To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet
  • To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet
  • To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet
  • To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet

To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet

Certification: RoHS, ISO
Shape: Metal Porcelain Tube
Shielding Type: Sharp Cutoff Shielding Tube
Cooling Method: Air Cooled Tube
Function: Switch Transistor
Working Frequency: High Frequency
Gold Member Since 2022

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Manufacturer/Factory, Trading Company

Basic Info.

Model NO.
TO247 OSG65R200HF
Structure
Planar
Encapsulation Structure
Chip Transistor
Power Level
High Power
Material
Silicon
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability .
The  GreenMOS®   Generic  series  is  optimized for extreme  switching  performance  to  minimize switching  loss .  It is tailored for high power density applications to  meet the  highest efficiency standards .

Features
      Low RDS(on) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      PC power
      LED lighting
      Telecom power
      Server power
      EV Charger
      Solar/UPS


Key Performance Parameters

Parameter Value Unit
VDS, min @ Tj(max) 700 V
ID, pulse 60 A
RDS(ON) , max @ VGS=10V 200 mΩ
Qg 24.8 nC


Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter Symbol Value Unit
Drain-source voltage VDS 650 V
Gate-source voltage VGS ±30 V
Continuous drain current1) , TC=25 °C
ID
20
A
Continuous drain current1) , TC=100 °C 12.5
Pulsed drain current2) , TC=25 °C ID, pulse 60 A
Continuous diode forward current1) , TC=25 °C IS 20 A
Diode pulsed current2) , TC=25 °C IS, pulse 60 A
Power dissipation3) , TC=25 °C PD 151 W
Single pulsed avalanche energy5) EAS 600 mJ
MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 15 V/ns
Operation and storage temperature Tstg , Tj -55 to 150 °C


Thermal Characteristics

Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 0.82 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W


Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source         breakdown voltage
BVDSS
650    
V
VGS=0 V, ID=250 uA
700 774   VGS=0 V, ID=250 u A, Tj=150 °C
Gate threshold
voltage
VGS(th) 2.0   4.0 V VDS=VGS, ID=250 u A
Drain-source on- state resistance
RDS(ON)
  0.16 0.2
Ω
VGS=10 V, ID=10 A
  0.42   VGS=10 V, ID=10 A,
Tj=150 °C
Gate-source
leakage current

IGSS
    100
nA
VGS=30 V
    -100 VGS=-30 V
Drain-source
leakage current
IDSS     1 μA VDS=650 V, VGS=0 V


Dynamic Characteristics

Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   1433   pF VGS=0 V,
VDS=50 V,
ƒ=100 kHz
Output capacitance Coss   92.5   pF
Reverse transfer capacitance Crss   3.9   pF
Turn-on delay time td(on)   40.1   ns
VGS=10 V,
VDS=520 V,
RG=25 Ω,
ID=20 A
Rise time tr   49.8   ns
Turn-off delay time td(off)   57.3   ns
Fall time tf   63.7   ns


Gate Charge Characteristics

Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   24.8   nC
VGS=10 V,
VDS=520 V,
ID=20 A
Gate-source charge Qgs   7.2   nC
Gate-drain charge Qgd   8.2   nC
Gate plateau voltage Vplateau   5.6   V


Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=150 V, VGS=10 V, L=10.8 mH, starting Tj=25 °C.

Ordering Information

Package
Type
Units/
Tube
Tubes/  Inner Box Units/   Inner Box Inner Boxes/ Carton Box Units/     Carton Box
TO247-J 30 20 600 5 3000
TO247-P 30 11 330 6 1980


Product Information

Product Package Pb Free RoHS Halogen Free
OSG65R200HF TO247 yes yes yes


Supply Chain

To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet



Green Product Declaration

To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet
To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power MosfetTo247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet
To247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power MosfetTo247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power MosfetTo247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power MosfetTo247 Osg65r200hf Vds-700V ID-60A RDS (ON) -200milliohm Qg-24.8nc N-Channel Power Mosfet

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