Sic Diode To247-4L Ost60n65h4ewf Vces-650V Temperature175, IC-Pulse-240A Vce (sat) -1.45V Qg-105nc N-Channel Power IGBT

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: IGBT-Sic Diode To247-4L OST60N65H4EWf
• Cooling Method: Air Cooled Tube
• Function: Microwave Transistor, Switch Transistor
• Working Frequency: High Frequency
• Structure: Diffusion
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35*37*35
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month
• Package Size: 35.00cm * 37.00cm * 35.00cm
• Package Gross Weight: 15.000kg

Product Description

General Description
OST60N65H4EWF  uses  advanced  Oriental-Semi's  patented  Trident-Gate  Bipolar  Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.


Features
      Advanced TGBTTM technology
      Excellent conduction and switching loss
      Excellent stability and uniformity
      Fast and soft antiparallel SiC diode


Applications
      Induction converters
      Uninterruptible power supplies


Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25 °C	650	V
Maximum junction temperature	175	°C
IC, pulse	240	A
VCE(sat), typ @ VGE=15 V	1.45	V
Qg	105	nC

Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10 µs, D<0.01		±30	V
Continuous collector current1) , TC=25 °C	IC	80	A
Continuous collector current1) , TC=100 °C		60	A
Pulsed collector current2) , TC=25 °C	IC, pulse	240	A
Diode forward current1) , TC=25 °C	IF	80	A
Diode forward current1) , TC=100 °C		60	A
Diode pulsed current2) , TC=25 °C	IF, pulse	240	A
Power dissipation3) , TC=25 °C	PD	375	W
Power dissipation3) , TC=100 °C		150	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.4	°C/W
Diode thermal resistance, junction-case	RθJC	0.65	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj=25 °C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter    breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter  saturation voltage	VCE(sat)		1.45	1.75	V	VGE =15 V, IC=60 A Tvj=25 °C
			1.65		V	VGE =15 V, IC=60 A, Tvj=125 °C
			1.75			VGE =15 V, IC=60 A, Tvj=175 °C
Gate-emitter        threshold voltage	VGE(th)	3.0	4.0	5.0	V	VCE =VGE , ID =0.5 mA
Diode forward voltage	VF		2.2		V	VGE =0 V, IF =50 A Tvj=25 °C
			2.8			VGE =0 V, IF =50 A, Tvj=125 °C
			3.4			VGE =0 V, IF =50 A, Tvj=175 °C
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			50	μA	VCE =650 V, VGE =0 V

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		105		nC	VGE =15 V, VCC=520 V, IC=60 A
Gate-emitter charge	Qge		42.5		nC
Gate-collector charge	Qgc		17.6		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		36		ns	VR=400 V, IF=60 A, diF/dt=500 A/μs Tvj =25 °C
Diode reverse recovery charge	Qrr		99		nC
Diode peak reverse recovery current	Irrm		5.4		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.



Ordering Information

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO247-4L-S	30	15	450	4	1800

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OST60N65H4EWF	TO247-4L	yes	yes	yes

 

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