Pdfn5*6 Sfs06r013ugf Vds-60V ID-520A RDS (ON) -1.6milliohm Qg-83.6nc Transistor Mode N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: PDFN5*6 SFS06R013UGF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description

FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.

 

Features

• Low RDS(ON) & FOM
• Extremely low switching loss
• Excellent reliability and uniformity
• Fast switching and soft recovery

 

Applications

• PD charger
• Motor driver
• Switching voltage regulator
• DC-DC convertor
• Switched mode power supply

 

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	60	V
ID, pulse	520	A
RDS(ON), max @ VGS=10V	1.6	mΩ
Qg	83.6	nC

Marking Information
 

Product Name	Package	Marking
SFS06R013UGF	PDFN5*6	SFS06R013UG

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	60	V
Gate-source voltage	VGS	±20	V
Continuous drain current1), TC=25 °C	ID	130	A
Pulsed drain current2), TC=25 °C	ID, pulse	520	A
Continuous diode forward current1), TC=25 °C	IS	130	A
Diode pulsed current2), TC=25 °C	IS, pulse	520	A
Power dissipation3), TC=25 °C	PD	140	W
Single pulsed avalanche energy5)	EAS	155	mJ
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

 

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.89	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	60			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	1.5		2.5	V	VDS=VGS, ID=250 μA
Drain-source on-state resistance	RDS(ON)		1.35	1.6	mΩ	VGS=10 V, ID=20 A
Drain-source on-state resistance	RDS(ON)		2.1	3.0	mΩ	VGS=4.5 V, ID=20 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				-100		VGS=-20 V
Drain-source leakage current	IDSS			1	μA	VDS=60 V, VGS=0 V
Gate resistance	RG		2.5		Ω	ƒ=1 MHz, Open drain

 

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		5162		pF	VGS=0 V, VDS=25 V, ƒ=100 kHz
Output capacitance	Coss		2549		pF
Reverse transfer capacitance	Crss		105		pF
Turn-on delay time	td(on)		19.6		ns	VGS=10 V, VDS=30 V, RG=2 Ω, ID=30 A
Rise time	tr		34.6		ns
Turn-off delay time	td(off)		68.3		ns
Fall time	tf		24.4		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		83.6		nC	VGS=10 V, VDS=30 V, ID=30 A
Gate-source charge	Qgs		14.6		nC
Gate-drain charge	Qgd		16.6		nC
Gate plateau voltage	Vplateau		3.2		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS=0 V
Reverse recovery time	trr		58.1		ns	VR=30 V, IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		55.1		nC
Peak reverse recovery current	Irrm		1.6		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.

 

 

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