Sic Diode To247 Ost80n65hewf Vces-650V Maximum Junction Temperature175, IC, Pulse-320A Vce (sat) -1.45V Qg-168nc Power IGBT

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: IGBT-Sic Diode TO247 OST80N65HEWF
• Structure: Diffusion
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
OST80N65HEWF   uses   advanced   Oriental-Semi's   patented   Trident-Gate   Bipolar  Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.



Features
      Advanced TGBTTM technology
      Excellent conduction and switching loss
      Excellent stability and uniformity
      Fast and soft antiparallel SiC diode


Applications
      Induction converters
      Uninterruptible power supplies



Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25 °C	650	V
Maximum junction temperature	175	°C
IC, pulse	320	A
VCE(sat), typ @ VGE=15 V	1.5	V
Qg	168	nC

Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10 µs, D<0.01		±30	V
Continuous collector current1) , TC=25 °C	IC	114	A
Continuous collector current1) , TC=100 °C		80	A
Pulsed collector current2) , TC=25 °C	IC, pulse	320	A
Diode forward current1) , TC=25 °C	IF	114	A
Diode forward current1) , TC=100 °C		80	A
Diode pulsed current2) , TC=25 °C	IF, pulse	320	A
Power dissipation3) , TC=25 °C	PD	395	W
Power dissipation3) , TC=100 °C		198	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C
Short circuit withstand time VGE =15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj =150 °C	SC	5	μs

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.38	°C/W
Diode thermal resistance, junction-case	RθJC	0.65	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj=25 °C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter    breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter  saturation voltage	VCE(sat)		1.5	1.8	V	VGE =15 V, IC=80 A Tvj=25 °C
			1.7		V	VGE =15 V, IC=80 A, Tvj=125 °C
			1.85			VGE =15 V, IC=80 A, Tvj=175 °C
Gate-emitter        threshold voltage	VGE(th)	3.5	4.5	5.5	V	VCE =VGE , ID =0.5 mA
Diode forward voltage	VF		2.0		V	VGE =0 V, IF =40 A Tvj=25 °C
			2.2			VGE =0 V, IF =40 A, Tvj=125 °C
			2.6			VGE =0 V, IF =40 A, Tvj=175 °C
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			50	μA	VCE =650 V, VGE =0 V

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		168		nC	VGE =15 V, VCC=520 V, IC=80 A
Gate-emitter charge	Qge		74		nC
Gate-collector charge	Qgc		30		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		41		ns	VR=400 V, IF=80 A, diF/dt=500 A/μs
Diode reverse recovery charge	Qrr		141		nC
Diode peak reverse recovery current	Irrm		7		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.



Ordering Information

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO247-P	30	15	450	4	1800

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OST80N65HEWF	TO247	yes	yes	yes

 

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