To247 Osg65r140hszf Vds-700V ID-75A RDS (ON) -140ohm Qg-55.2nc N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO247 OSG65R140HSZF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability .
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.


Features
      Low RDS(on) & FOM
      Extremely low switching loss
      Excellent stability and uniformity
      Ultra-fast and robust body diode


Applications
      PC power
      Telecom power
      Server power
      EV Charger
      Motor driver



Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	75	A
RDS(ON) , max @ VGS=10V	140	mΩ
Qg	55.2	nC

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	25	A
Continuous drain current1) , TC=100 °C		16
Pulsed drain current2) , TC=25 °C	ID, pulse	75	A
Continuous diode forward current1) , TC=25 °C	IS	25	A
Diode pulsed current2) , TC=25 °C	IS, pulse	75	A
Power dissipation3) ,TC=25 °C	PD	219	W
Single pulsed avalanche energy5)	EAS	1000	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.57	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source         breakdown voltage	BVDSS	650			V	VGS=0 V, ID=1 mA
		700	750			VGS=0 V, ID=1 mA, Tj=150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=1 mA
Drain-source on- state resistance	RDS(ON)		0.12	0.14	Ω	VGS=10 V, ID=12.5 A
			0.30			VGS=10 V, ID=12.5 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		16.7		Ω	ƒ= 1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		2855.4		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		151.1		pF
Reverse transfer capacitance	Crss		7.7		pF
Turn-on delay time	td(on)		56.3		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=16 A
Rise time	tr		68.8		ns
Turn-off delay time	td(off)		108.5		ns
Fall time	tf		31.6		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		55.2		nC	VGS=10 V, VDS=400 V, ID=16 A
Gate-source charge	Qgs		13.7		nC
Gate-drain charge	Qgd		24.0		nC
Gate plateau voltage	Vplateau		6.8		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=25 A, VGS=0 V
Reverse recovery time	trr		126.0		ns	IS=16 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		0.7		μC
Peak reverse recovery current	Irrm		10.6		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.


Ordering Information

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO247-C	30	11	330	6	1980
TO247-J	30	20	600	5	3000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OSG65R140HSZF	TO247	yes	yes	yes

Supply Chain

Green Product Declaration