Vds-100V ID-420A Switching Voltage Regulator N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: TO252 SFG10R20DF
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Application: Pd Charge
• Application2: Motor Driver
• Application3: DC-DC Convertor
• Application4: Switched Mode Powder Supply
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1K/Mont
• Package Size: 35.00cm * 35.00cm * 26.00cm
• Package Gross Weight: 2.000kg

Product Description

Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth  series is specially designed to use in synchronous rectification power systems with low driving voltage.

Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent reliability and uniformity
. Fast switching and soft recovery

Applications
. PD charger
. Motor driver
. Switching voltage regulator
. DC-DC convertor
. Switched mode power supply

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	100	V
ID, pulse	120	A
RDS(ON) max @ VGS=10V	20	mΩ
Qg	19.8	nC

Marking Information

 

Product Name	Package	Marking
SFG10R20DF	TO252	SFG10R20D

Package & Pin information





Oriental Semiconductor © Copyright Reserved V2.0

Page.1

 

SFG10R20DF
Enhancement Mode N-Channel Power MOSFET

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	100	V
Gate source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	40	A
Pulsed drain current2) , TC=25 °C	ID, pulse	120	A
Continuous diode forward current1) , TC=25 °C	IS	40	A
Diode pulsed current2) , TC=25 °C	IS, Pulse	120	A
Power dissipation3) , TC=25 °C	PD	72	W
Single pulsed avalanche energy5)	EAS	30	mJ
Operation and storage temperature	Tstg ,Tj	-55 to 150	°C

Thermal Characteristics

 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.74	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	100			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	1.0		2.5	V	VDS=VGS , ID=250 μA
Drain-source on-state resistance	RDS(ON)		17	20	mΩ	VGS=10 V, ID=8 A
Drain-source on-state resistance	RDS(ON)			26	mΩ	VGS=4.5 V, ID=6 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				- 100		VGS=-20 V
Drain-source leakage current	IDSS			1	μA	VDS=100 V, VGS=0 V

 

 

Oriental Semiconductor © Copyright Reserved V2.0

Page.2

 

Dynamic Characteristics

SFG10R20DF
Enhancement Mode N-Channel Power MOSFET
 

 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		1191		pF	VGS=0 V, VDS=50 V, ƒ=1 MHz
Output capacitance	Coss		195		pF
Reverse transfer capacitance	Crss		4.1		pF
Turn-on delay time	td(on)		17.8		ns	VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A
Rise time	tr		3.9		ns
Turn-off delay time	td(off)		33.5		ns
Fall time	tf		3.2		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		19.8		nC	VGS=10 V, VDS=50 V, ID=8 A
Gate-source charge	Qgs		2.4		nC
Gate-drain charge	Qgd		5.3		nC
Gate plateau voltage	Vplateau		3.2		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=8 A, VGS=0 V
Reverse recovery time	trr		50.2		ns	VR=50 V, IS=8 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		95.1		nC
Peak reverse recovery current	Irrm		2.5		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.