Manufacturing Technology: | Integrated Circuits Device |
---|---|
Material: | Compound Semiconductor |
Type: | N-type Semiconductor |
Shipping Cost:
Estimated freight per unit. |
about shipping cost and estimated delivery time. |
---|
Payment Method: | |
---|---|
Initial Payment Full Payment |
Currency: | US$ |
---|
Return&refunds: | You can apply for a refund up to 30 days after receipt of the products. |
---|
Suppliers with verified business licenses
General Description
The high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
Low RDS(ON) & FOM
Extremely low switching loss
Excellent stability and uniformity
Applications
LED lighting
Telecom Power
Solar/UPS
Sever power
PC power
EV Charger
Parameter | Value | Unit |
VDS, min @ Tj(max) | 850 | V |
ID, pulse | 45 | A |
RDS(ON) , max @ VGS=10V | 300 | mΩ |
Qg | 23.3 | nC |
Product Name | Package | Marking |
OSG80R300JF | PDFN 8×8 | OSG80R300J |
Parameter | Symbol | Value | Unit |
Drain-source voltage | VDS | 800 | V |
Gate-source voltage | VGS | ±30 | V |
Continuous drain current1) , TC=25 °C | ID |
15 | A |
Continuous drain current1) , TC=100 °C | 9.5 | ||
Pulsed drain current2) , TC=25 °C | ID, pulse | 45 | A |
Continuous diode forward current1) , TC=25 °C | IS | 15 | A |
Diode pulsed current2) , TC=25 °C | IS, pulse | 45 | A |
Power dissipation3) , TC=25 °C | PD | 151 | W |
Single pulsed avalanche energy5) | EAS | 360 | mJ |
MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 15 | V/ns |
Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Parameter | Symbol | Value | Unit |
Thermal resistance, junction-case | RθJC | 0.83 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage |
BVDSS |
800 | V |
VGS=0 V, ID=250 μA | ||
850 | VGS=0 V, ID=250 μA, Tj=150 °C | |||||
Gate threshold voltage |
VGS(th) | 2.9 | 3.9 | V | VDS=VGS , ID=250 μA | |
Drain-source on- state resistance | RDS(ON) |
0.24 | 0.3 | Ω |
VGS=10 V, ID=7.5 A | |
0.64 | VGS=10 V, ID=7.5 A, Tj=150 °C | |||||
Gate-source leakage current |
IGSS |
100 | nA |
VGS=30 V | ||
- 100 | VGS=-30 V | |||||
Drain-source leakage current |
IDSS | 5 | μA | VDS=800 V, VGS=0 V | ||
Gate resistance | RG | 18.2 | Ω | ƒ=1 MHz, Open drain |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Ciss | 1552 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz |
||
Output capacitance | Coss | 80.1 | pF | |||
Reverse transfer capacitance | Crss | 2.1 | pF | |||
Turn-on delay time | td(on) | 33.6 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=7.5 A |
||
Rise time | tr | 20.3 | ns | |||
Turn-off delay time | td(off) | 57.9 | ns | |||
Fall time | tf | 4.5 | ns |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | 22.7 | nC | VGS=10 V, VDS=400 V, ID=7.5 A |
||
Gate-source charge | Qgs | 8.6 | nC | |||
Gate-drain charge | Qgd | 2.3 | nC | |||
Gate plateau voltage | Vplateau | 5.5 | V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode forward voltage | VSD | 1.3 | V | IS=15 A, VGS=0 V |
||
Reverse recovery time | trr | 313.7 | ns | VR =400 V, IS=7.5 A, di/dt=100 A/μs |
||
Reverse recovery charge | Qrr | 4.2 | μC | |||
Peak reverse recovery current | Irrm | 25.2 | A |
Suppliers with verified business licenses