Battery Protection N-Channel Power Mosfet To220 Sfg100n10PF Vds-100V ID-300A RDS (ON) -8milliohm Qg-55.6nc

• Certification: RoHS, ISO
• Shape: Subminiature
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Microwave Transistor
• Working Frequency: High Frequency
• Model NO.: TO220 SFG100N10PF
• Structure: Diffusion
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.
 

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity
      Fast switching and soft recovery


Applications
      Switched mode power supply
      Motor driver
      Battery protection
      DC-DC convertor
      Solar inverter
      UPS and energy inverter


Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	100	V
ID, pulse	300	A
RDS(ON), max @ VGS =10V	8	mΩ
Qg	55.6	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	100	V
Gate source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	100	A
Pulsed drain current2) , TC=25 °C	ID, pulse	300	A
Continuous diode forward current1) , TC=25 °C	IS	100	A
Diode pulsed current2) , TC=25 °C	IS, pulse	300	A
Power dissipation3) , TC=25 °C	PD	148	W
Single pulsed avalanche energy5)	EAS	130	mJ
Operation and storage temperature	Tstg ,Tj	-55 to 150	°C

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.


Ordering Information

Package Type	Units/ Tube	Tubes /  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO220-C	50	20	1000	6	6000
TO220-J	50	20	1000	5	5000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
SFG100N10PF	TO220	yes	yes	yes

Electrical Characteristics at Tj =25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	100			V	VGS =0 V, ID =250 μA
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS =VGS , ID =250 μA
Drain-source on-state resistance	RDS(ON)		6.5	8.0	mΩ	VGS =10 V, ID=12 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	μA	VDS =100 V, VGS =0 V

Supply Chain

Green Product Declaration