Vds-700V ID-12A RDS (ON) -1.4milliohm Qg-6.7nc EV Charger Solar/UPS Power Mosfet

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Sharp Cutoff Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: TO252 OSG65R1K4DF
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 37*37*29CM
• Trademark: Orientalsemi
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month
• Package Size: 37.00cm * 37.00cm * 29.00cm
• Package Gross Weight: 15.000kg

Product Description

Product Description

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
 

Features

• Low RDS(on) & FOM
• Extremely low switching loss
• Excellent stability and uniformity

 

Applications

• PC power
• LED lighting
• Telecom power
• Server power
• EV Charger
• Solar/UPS

 

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	12	A
RDS(ON) , max @ VGS=10V	1.4	Ω
Qg	6.7	nC

Marking Information

 

Product Name	Package	Marking
OSG65R1K4DF	TO252	OSG65R1K4D

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current1), TC=25 °C	ID	4	A
Continuous drain current1), TC=100 °C		2.5
Pulsed drain current2), TC=25 °C	ID, pulse	12	A
Continuous diode forward current1), TC=25 °C	IS	4	A
Diode pulsed current2), TC=25 °C	IS, pulse	12	A
Power dissipation3), TC=25 °C	PD	28.4	W
Single pulsed avalanche energy5)	EAS	112	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

 

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	4.4	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=250 μA
		700	770			VGS=0 V, ID=250 μA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS=VGS, ID=250 μA
Drain-source on- state resistance	RDS(ON)		1.2	1.4	Ω	VGS=10 V, ID=2 A
			2.9			VGS=10 V, ID=2 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=650 V, VGS=0 V

 

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		259.9		pF	VGS=0 V, VDS=50 V, ƒ=1 MHz
Output capacitance	Coss		21.1		pF
Reverse transfer capacitance	Crss		0.9		pF
Turn-on delay time	td(on)		30.9		ns	VGS=10 V, VDS=380 V, RG=25 Ω, ID=4 A
Rise time	tr		20.7		ns
Turn-off delay time	td(off)		56.3		ns
Fall time	tf		28.7		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		6.7		nC	VGS=10 V, VDS=400 V, ID=4 A
Gate-source charge	Qgs		1.5		nC
Gate-drain charge	Qgd		3.2		nC
Gate plateau voltage	Vplateau		6.4		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=4 A, VGS=0 V
Reverse recovery time	trr		162		ns	VR=400 V, IS=4 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.2		μC
Peak reverse recovery current	Irrm		7		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=50 V, VGS=10 V, L=20 mH, starting Tj=25 °C.

 

Supply Chain

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