Укрепление Pdfn транзисторов5*6 Sfs06R011ugf Vds-60 ID-8 00A (RDS) -1.5 milliohm Qg-98.3nc для включения регулятора напряжения N-канальные Mosfet

• Certification: RoHS, ISO
• Shape: Subminiature
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: Pdfn5*6 SFS06R011UGF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
FSMOS®   MOSFET  is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth  series is specially optimized for synchronous rectification systems with low driving voltage.


Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery

Applications
      PD charger
      Motor driver
      Switching voltage regulator
      DC-DC convertor
      Switching mode power supply

Key Performance Parameters

Parameter	Value	Unit
VDS	60	V
ID, pulse	800	A
RDS(ON), max @ VGS =10V	1.5	mΩ
Qg	98.3	nC

 

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	60	V
Gate-source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	200	A
Pulsed drain current2) , TC=25 °C	ID, pulse	800	A
Continuous diode forward current1) , TC=25 °C	IS	200	A
Diode pulsed current2) , TC=25 °C	IS, pulse	800	A
Power dissipation3), TC=25 °C	PD	170	W
Single pulsed avalanche energy5)	EAS	208	mJ
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	60			V	VGS =0 V, ID =250 μA
Gate threshold voltage	VGS(th)	1.3		2.3	V	VDS =VGS , ID =250 μA
Drain-source on-state resistance	RDS(ON)		1.3	1.5	mΩ	VGS =10 V, ID=30 A
Drain-source on-state resistance	RDS(ON)		1.8	2.1	mΩ	VGS =4.5 V, ID=30 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	μA	VDS =60 V, VGS =0 V
Gate resistance	RG		2.3		Ω	ƒ=1 MHz, Open drain

Ordering Information

Package Type	Units/ Reel	Reels/   Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
PDFN5×6-S	5000	1	5000	10	50000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
SFS06R011UGF	PDFN5×6	yes	yes	yes

Supply Chain

Green Product Declaration