High Current Low on-Resistance Power Mosfet Pdfn5×6 Through Hole for Motor Drive Industrial Switching Power Supply Made in China

• Certification: RoHS, ISO
• Encapsulation Structure: Chip Transistor
• Installation: Plug-in Triode
• Model NO.: SFS15R11UGNF
• Working Frequency: High Frequency
• Power Level: Medium Power
• Function: Power Triode, Switching Triode
• Structure: NPN
• Material: Silicon
• Vges: 20V
• Package: Pdfn5×6
• Vds: 150V
• ID,Pulse: 400A
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month
• Package Size: 59.00cm * 34.00cm * 15.00cm
• Package Gross Weight: 18.000kg

Product Description

Product Description

 

General Description
SFS15R11UGNF is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V.

Features
.  Low RDS(ON) & FOM
.  Extremely low switching loss
.  Excellent reliability and uniformity
.  Fast switching and soft recovery


Applications
.  Switching mode power supply
.  Motor driver
. Battery protection
. DC-DC convertor
. Inverters
. UPS


 

Key Performance Parameters

Parameter	Value	Unit
VDS	150	V
ID, pulse	400	A
RDS(ON), max@VGS=10V	11	mΩ
Qg	21	nC

 

 
Marking Information

 

 Package & Pin Information

ProductName	Package	Marking
SFS15R11UGNF	PDFN5×6	SFS15R11UGN

 

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	150	V
Gate-source voltage	VGS	±20	V
Continuous drain current1), TC=25 °C	ID	100	A
Pulsed drain current2), TC=25 °C	ID, pulse	400	A
Continuous diode forward current1), TC=25 °C	IS	100	A
Diode pulsed current2), TC=25 °C	IS, pulse	400	A
Power dissipation3),TC=25°C	PD	205	W
Single pulsed avalanche energy5)	EAS	94	mJ
Operation and storage temperature	Tstg,Tj	-55 to 150	°C

 

Thermal Characteristics

 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.61	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tvj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source  breakdown voltage	BVDSS	150			V	VGS=0 V, ID=250 μA
Gate threshold  voltage	VGS(th)	2.5		4.5	V	VDS=VGS, ID=250 μA
Drain-source on- stateresistance	RDS(ON)		8.8	11	mΩ	VGS=10 V, ID=50A
Gate-source  leakage current	IGSS			100	nA	VGS=20V
				-100		VGS=-20V
Drain-source  leakage current	IDSS			1	μA	VDS=150V, VGS=0 V
Gate resistance	RG		4.2		Ω	ƒ=1 MHz, Open drain

 

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		1308		pF	VGS=0 V, VDS=25V, ƒ=100 kHz
Output capacitance	Coss		1576		pF
Reverse transfer capacitance	Crss		63		pF
Turn-on delay time	td(on)		12		ns	VGS=10 V, VDS=80V, RG=2 Ω, ID=40A
Rise time	tr		10		ns
Turn-off delay time	td(off)		23		ns
Fall time	tf		10		ns

 

 

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Totalgate charge	Qg		21		nC	VGS=10 V, VDS=80V, ID=40A
Gate-source charge	Qgs		7		nC
Gate-drain charge	Qgd		8		nC
Gate plateau voltage	Vplateau		6		V

 

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20A,  VGS=0 V
Reverse recovery time	trr		53		ns	VR=80V, IS=40A, di/dt=400 A/μs
Reverse recovery charge	Qrr		281		nC
Peak reverse recovery current	Irrm		8		A

 

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.


 

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