General Purpose P-Channel Mosfet To247_Nl Through Hole for Low-Voltage Signal Switching Consumer Circuit Made in China

Product Description

Product Description

 

General Description

OSG65R045H4T3ZF_NB high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.

Features
.  Low RDS(ON) & FOM
.  Extremely low switching loss
.  Excellent reliability and uniformity
.  Fast switching and soft recovery


Applications
. PC power
. LED lighting
. Telecom power
. Server power
. EV Charger
. Solar/UPS


 

Key Performance Parameters

Parameter	Value	Unit
VDS	650	V
ID, pulse	156	A
RDS(ON), max @VGS=10V	45	mΩ
Qg	91	nC
PD	330	W

 

 
Marking Information 

ProductName	Package	Marking
OSG65R045H4T3ZF_NB	TO247_NL	OSG65R045H4T3Z

 

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage(static)	VGS	±20	V
Gate-source voltage(dynamic)		±30	V
Continuous drain current1), TC=25 °C	ID	52	A
Continuousdrain current1), TC=100 °C		33
Pulsed drain current2), TC=25 °C	ID, pulse	156	A
Continuous diode forward current1), TC=25 °C	IS	52	A
Diode pulsed current2), TC=25 °C	IS, pulse	156	A
Power dissipation3), TC=25 °C	PD	330	W
Single pulsed avalanche energy4)	EAS	405	mJ
=0…40MOSFET dv/dt ruggedness, VDS0V	dv/dt	100	V/ns
=0…40Reverse diode dv/dt, VDS0V,ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

 

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.38	°C/W
Thermal resistance, junction-ambient	RθJA	62	°C/W

 

Electrical Characteristics at Tvj=25°C unless otherwise specified  

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source  breakdown voltage	BVDSS	650			V	VGS=0 V, ID=1mA
Gate threshold  voltage	VGS(th)	3.5		5.5	V	VDS=VGS, ID=1mA
Drain-source on- state resistance	RDS(ON)		40	45	mΩ	VGS=10 V, ID=26A
			101			VGS=10 V, ID=26A, Tj=150°C
Gate-source  leakage current	IGSS			100	nA	VGS=20 V
				-100		VGS=-20 V
Drain-source  leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		2.9		Ω	ƒ=1 MHz, Open drain

 

Dynamic Characteristics  

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		4354		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		234		pF
Reverse transfer capacitance	Crss		3.6		pF
Effective output capacitance, energy related	Co(er)		160		pF	VGS=0V, VDS=0V-400V
Effective output capacitance, time related	Co(tr)		1000		pF
Turn-on delay time	td(on)		28		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=26A
Rise time	tr		35		ns
Turn-off delay time	td(off)		63		ns
Fall time	tf		2.2		ns

 

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		91		nC	VGS=10 V, VDS=400 V, ID=26A
Gate-source charge	Qgs		28		nC
Gate-drain charge	Qgd		39		nC
Gate plateau voltage	Vplateau		7		V

 

Body Diode Characteristics 

 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=52A,  VGS=0 V
Reverse recovery time	trr		174		ns	VR=400 V, IS=26A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.1		μC
Peak reverse recovery current	Irrm		10.7		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.


 

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