Certification: | RoHS, ISO |
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Shape: | Metal Porcelain Tube |
Shielding Type: | Sharp Cutoff Shielding Tube |
Cooling Method: | Air Cooled Tube |
Function: | Switch Transistor |
Working Frequency: | High Frequency |
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Parameter | Value | Unit |
VCES, min @ 25 °C | 650 | V |
Maximum junction temperature | 175 | °C |
IC, pulse | 200 | A |
VCE(sat), typ @ VGE=15 V | 1.6 | V |
Qg | 1 11 | nC |
Parameter | Symbol | Value | Unit |
Collector emitter voltage | VCES | 650 | V |
Gate emitter voltage | VGES |
±20 | V |
Transient gate emitter voltage, TP≤10 µs, D<0.01 | ±30 | V | |
Continuous collector current1) , TC=25 °C | IC |
80 | A |
Continuous collector current1) , TC=100 °C | 50 | A | |
Pulsed collector current2) , TC=25 °C | IC, pulse | 200 | A |
Diode forward current1) , TC=25 °C | IF |
30 | A |
Diode forward current1) , TC=100 °C | 20 | A | |
Diode pulsed current2) , TC=25 °C | IF, pulse | 200 | A |
Power dissipation3) , TC=25 °C | PD |
375 | W |
Power dissipation3) , TC=100 °C | 150 | W | |
Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
Short circuit withstand time VGE =15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj =150 °C |
SC |
10 |
μs |
Parameter | Symbol | Value | Unit |
IGBT thermal resistance, junction-case | RθJC | 0.4 | °C/W |
Diode thermal resistance, junction-case | RθJC | 1.29 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE =0 V, IC =0.5 mA | ||
Collector-emitter saturation voltage |
VCE(sat) |
1.6 | 1.85 | V | VGE =15 V, IC=50 A Tvj=25 °C |
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1.8 | V | VGE =15 V, IC=50 A, Tvj=125 °C |
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1.9 | VGE =15 V, IC=50 A, Tvj=175 °C |
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Gate-emitter threshold voltage | VGE(th) | 3.5 | 4.5 | 5.5 | V | VCE =VGE , ID =0.5 mA |
Diode forward voltage |
VF |
2.2 | V | VGE =0 V, IF =25 A Tvj=25 °C |
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2.6 | VGE =0 V, IF =25 A, Tvj=125 °C |
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2.9 | VGE =0 V, IF =25 A, Tvj=175 °C |
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Gate-emitter leakage current |
IGES | 100 | nA | VCE =0 V, VGE=20 V | ||
Zero gate voltage collector current | ICES | 50 | μA | VCE =650 V, VGE =0 V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | 111 | nC | VGE =15 V, VCC=520 V, IC=50 A |
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Gate-emitter charge | Qge | 52 | nC | |||
Gate-collector charge | Qgc | 22 | nC |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode reverse recovery time | trr | 38 | ns | VR=400 V, IF=50 A, diF/dt=500 A/μs Tvj =25 °C |
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Diode reverse recovery charge | Qrr | 100 | nC | |||
Diode peak reverse recovery current | Irrm | 5.4 | A |
Package Type |
Units/ Tube |
Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
TO247-J | 30 | 20 | 600 | 5 | 3000 |
Product | Package | Pb Free | RoHS | Halogen Free |
OST50N65HEWF | TO247 | yes | yes | yes |
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