Aec-Q101 RoHS Motor Driver Osg65r099hszaf To247 Vds 650V RDS99mΩ Fast Recovery Diode High Voltage Power Mosfet
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Product Details
| Type: | Car Power Inverter |
|---|---|
| Certification: | RoHS |
| Description: | Extremely Low Switching Loss |
Gold Member Since 2022
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Address
Room 302, Building 20, No. 518 Xinzhuan Road, Songjiang District, Shanghai China (Zip ...
International Commercial Terms(Incoterms)
FOB, EXW, CIF, DDP, FCA
Terms of Payment
LC, T/T, D/P, Western Union
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Basic Info.
- Model NO.
- OSG65R099HSZAF TO247
- Characteristics
- Excellent Stability and Uniformity
- Applications
- PC Power
- Industries
- LED Lighting
- Transport Package
- Air
- Specification
- 35.5x30x37cm/60x23x13cm
- Trademark
- Orientalsemiconductor
- Origin
- China
- HS Code
- 854129000
- Production Capacity
- 20kkkk/Monthly
Product Description
General Description
FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
Applications
Key Performance Parameters
Marking Information
FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.
Features
- Low RDS(ON) & FOM (Figure of Merit)
- Extremely low switching loss
- Excellent reliability and uniformity
- Fast switching and soft recovery
- AEC-Q101 Qualified for Automotive Applications
Applications
- Consumer electronic power supply
- Motor control
- Synchronous rectification
- Isolated DC/DC convertor
- Invertors
Key Performance Parameters
| Parameter | Value | Unit |
| VDS | 40 | V |
| ID, pulse | 600 | A |
| RDS(ON) max @ VGS=10V | 1.1 | mΩ |
| Qg | 118.4 | nC |
Marking Information
| Product Name | Package | Marking |
| SFS04R013UGF | PDFN5 x 6 | SFS04R013UG |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 40 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1), TC=25 °C | ID | 200 | A |
| Pulsed drain current2), TC=25 °C | ID, pulse | 600 | A |
| Continuous diode forward current1), TC=25 °C | IS | 200 | A |
| Diode pulsed current2), TC=25 °C | IS, Pulse | 600 | A |
| Power dissipation3), TC=25 °C | PD | 178 | W |
| Single pulsed avalanche energy5) | EAS | 144 | mJ |
| Operation and storage temperature | Tstg,Tj | -55 to 175 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.84 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0 V, ID=250 μA | ||
| Gate threshold voltage | VGS(th) | 1.2 | 2.5 | V | VDS=VGS, ID=250 μA | |
| Drain-source on- state resistance | RDS(ON) | 0.9 | 1.1 | mΩ | VGS=10 V, ID=20 A | |
| Drain-source on- state resistance | RDS(ON) | 1.5 | 2.0 | mΩ | VGS=6 V, ID=20 A | |
| Gate-source leakage current | IGSS |
100 | nA |
VGS=20 V | ||
| -100 | VGS=-20 V | |||||
| Drain-source leakage current | IDSS | 1 | uA | VDS=40 V, VGS=0 V | ||
| Gate resistance | RG | 3.2 | Ω | ƒ=1 MHz, Open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 5453 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz |
||
| Output capacitance | Coss | 1951 | pF | |||
| Reverse transfer capacitance | Crss | 113 | pF | |||
| Turn-on delay time | td(on) | 23.9 | ns | VGS=10 V, VDS=40 V, RG=2 Ω, ID=40 A |
||
| Rise time | tr | 16.9 | ns | |||
| Turn-off delay time | td(off) | 80.4 | ns | |||
| Fall time | tf | 97.7 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 85.6 | nC | VGS=10 V VDS=40 V, ID=40 A, |
||
| Gate-source charge | Qgs | 17.6 | nC | |||
| Gate-drain charge | Qgd | 14.5 | nC | |||
| Gate plateau voltage | Vplateau | 3.6 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V | ||
| Reverse recovery time | trr | 71.1 | ns | VR=40 V, IS=40 A, di/dt=100 A/μs |
||
| Reverse recovery charge | Qrr | 50.1 | nC | |||
| Peak reverse recovery current | Irrm | 1.2 | A |
Note
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
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