Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet

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Product Details
Type: Car Power Inverter
Certification: RoHS
Description: Extremely Low Switching Loss
Shanghai Winture Electric Co., Ltd.
Gold Member Since 2022

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Room 302, Building 20, No. 518 Xinzhuan Road, Songjiang District, Shanghai China (Zip ...
International Commercial Terms(Incoterms)
FOB, EXW, CIF, DDP, FCA
Terms of Payment
LC, T/T, D/P, Western Union
Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet pictures & photos
Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet pictures & photos
Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet pictures & photos
Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet pictures & photos
Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet pictures & photos
Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet pictures & photos
  • Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet
  • Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet
  • Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet
  • Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet
  • Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet
  • Boost Pfc Server Power Osg65r038hzaf To247 Vds 650V RDS38mΩ Mosfet
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Product Description

Company Info.

Basic Info.

Model NO.
Osg65r038hzaf To247
Characteristics
Excellent Stability and Uniformity
Applications
PC Power
Industries
LED Lighting
Application
Car Inverter
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20kkkk/Monthly

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features
  • Low RDS(ON) & FOM
  • Extremely low switching loss
  • Excellent stability and uniformity
  • Ultra-fast and robust body diode

Applications                                                                                            
  • PC power
  • Telecom power
  • Server power
  • EV Charger
  • Motor driver

Key Performance Parameters
 
Parameter Value Unit
VDS, min @ Tj(max) 700 V
ID, pulse 240 A
RDS(ON), max @ VGS=10V 38 mΩ
Qg 175 nC

Marking Information
 
Product Name Package Marking
OSG65R038HZF TO247 OSG65R038HZ
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage VDS 650 V
Gate-source voltage VGS ±30 V
Continuous drain current1), TC=25 °C
ID		 80
A
Continuous drain current1), TC=100 °C 50
Pulsed drain current2), TC=25 °C ID, pulse 240 A
Continuous diode forward current1), TC=25 °C IS 80 A
Diode pulsed current2), TC=25 °C IS, pulse 240 A
Power dissipation3) ,TC=25 °C PD 500 W
Single pulsed avalanche energy5) EAS 2900 mJ
MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 100 V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 50 V/ns
Operation and storage temperature Tstg, Tj -55 to 150 °C

Thermal Characteristics
 
Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 0.25 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition

Drain-source breakdown voltage
BVDSS		 650    
V		 VGS=0 V, ID=2 mA
700 770   VGS=0 V, ID=2 mA, Tj=150 °C
Gate threshold
voltage		 VGS(th) 3.0   4.5 V VDS=VGS, ID=2 mA

Drain-source
on-state resistance
RDS(ON)		   0.032 0.038
Ω		 VGS=10 V, ID=40 A
  0.083   VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current
IGSS		     100
nA		 VGS=30 V
    -100 VGS=-30 V
Drain-source leakage current IDSS     10 μA VDS=650 V, VGS=0 V
Gate resistance RG   2.1   Ω ƒ=1 MHz, Open drain

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   9276   pF
VGS=0 V, VDS=50 V,
ƒ=100 kHz
Output capacitance Coss   486   pF
Reverse transfer capacitance Crss   12.8   pF
Effective output capacitance, energy related Co(er)   278   pF
VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related Co(tr)   1477   pF
Turn-on delay time td(on)   55.9   ns
VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time tr   121.2   ns
Turn-off delay time td(off)   114.2   ns
Fall time tf   8.75   ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   175.0   nC

VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge Qgs   40.1   nC
Gate-drain charge Qgd   76.1   nC
Gate plateau voltage Vplateau   6.4   V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.3 V IS=80 A, VGS=0 V
Reverse recovery time trr   180   ns
IS=30 A,
di/dt=100 A/μs
Reverse recovery charge Qrr   1.5   uC
Peak reverse recovery current Irrm   15.2   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
  5. VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.

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