RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet

Product Details
Description: Extremely Low Switching Loss
Characteristics: Excellent Stability and Uniformity
Applications: PC Power
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Plant Area
501~1000 square meters
  • RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet
  • RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet
  • RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet
  • RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet
  • RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet
  • RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet
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Basic Info.

Model NO.
OSG90R1K2FF TO220F
Industries
LED Lighting
Type
Fast EV Charging Station
Certification
ISO, TUV, RoHS
Warranty
24 Months
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20kkkk/Monthly

Product Description

General Description
OSG90R1K2xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.


Features                                                                      Applications
  1. Low RDS(on) & FOM                                              Lighting
  2. Extremely low switching loss                               Hard switching PWM
  3. Excellent stability and uniformity                         Server power supply
  4. Easy to drive                                                       Charger

Key Performance Parameters
 
    1. Absolute Maximum Ratings at Tj=25ºC unless otherwise noted
 
Parameter Symbol Value Unit
Drain source voltage VDS 900 V
Gate source voltage VGS ±30 V
Continuous drain current1), TC=25 ºC ID 5 A
Continuous drain current1), TC=100 ºC 3.2
Pulsed drain current2), TC=25 ºC ID, pulse 15 A
Power dissipation3) for TO251, TO262, TC=25 ºC PD 83 W
Power dissipation3) for TO220F, TC=25 ºC 31
Single pulsed avalanche energy5) EAS 211 mJ
MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 15 V/ns
Operation and storage temperature Tstg,Tj -55 to 150 ºC
 
 
  1. &bsp; Thermal Characteristics
 
Parameter Symbol Value Unit
TO251/TO262 TO220F
Thermal resistance, junction-case RθJC 1.5 4.0 ºC/W
Thermal resistance, junction-ambient4) RθJA 62 62.5 ºC/W
  1. Electrical Characteristics at Tj=25 ºC unless otherwise specified
 
Parameter Symbol Min. Typ. Max. Unit Test condition

Drain-source breakdown voltage

BVDSS
900    
V
VGS=0 V, ID=250 μA
960 1070   VGS=0 V, ID=250 μA,
Tj=150 ºC
Gate threshold voltage VGS(th) 2.0   4.0 V VDS=VGS, ID=250 μA

Drain-source on-state resistance

RDS(ON)
  1.0 1.2
Ω
VGS=10 V, ID=2 A
  2.88   VGS=10 V, ID=2 A,
Tj=150 ºC

Gate-source leakage current

IGSS
    100
nA
VGS=30 V
    -100 VGS=-30 V
Drain-source leakage current IDSS     10 μA VDS=900 V, VGS=0 V
  1. Dynamic Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   874.2   pF VGS=0 V, VDS=50 V,
f=100 kHz
Output capacitance Coss   37.5   pF
Reverse transfer capacitance Crss   1.7   pF
Turn-on delay time td(on)   33.23   ns VGS=10 V, VDS=400 V, RG=33 Ω, ID=5 A
Rise time tr   26.50   ns
Turn-off delay time td(off)   44.00   ns
Fall time tf   17.63   ns
 
 
  1. Gate Charge Characteristics
RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   12.50   nC
ID=5 A, VDS=400 V, VGS=10 V
Gate-source charge Qgs   3.75   nC
Gate-drain charge Qgd   4.28   nC
Gate plateau voltage Vplateau   5.8   V
  1. Body Diode Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward current IS     5
A

VGS<Vth
Pulsed source current ISP     15
Diode forward voltage VSD     1.3 V IS=5 A, VGS=0 V
Reverse recovery time trr   265.87   ns
VR=400 V, IS=5 A,
di/dt=100 A/μs
Reverse recovery charge Qrr   2.88   μC
Peak reverse recovery current Irrm   19.51   A
  1. Note
 
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ºC.
  5. VDD=100 V, RG=47 Ω, L=10 mH, starting Tj=25 ºC.
   
     
     
     
     

Marking Information
 
Product Name Package Marking
OSG65R038HZF TO247 OSG65R038HZ
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage VDS 650 V
Gate-source voltage VGS ±30 V
Continuous drain current1), TC=25 °C
ID
80
A
Continuous drain current1), TC=100 °C 50
Pulsed drain current2), TC=25 °C ID, pulse 240 A
Continuous diode forward current1), TC=25 °C IS 80 A
Diode pulsed current2), TC=25 °C IS, pulse 240 A
Power dissipation3) ,TC=25 °C PD 500 W
Single pulsed avalanche energy5) EAS 2900 mJ
MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 100 V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 50 V/ns
Operation and storage temperature Tstg, Tj -55 to 150 °C

Thermal Characteristics
 
Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 0.25 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition

Drain-source breakdown voltage

BVDSS
650    
V
VGS=0 V, ID=2 mA
700 770   VGS=0 V, ID=2 mA, Tj=150 °C
Gate threshold
voltage
VGS(th) 3.0   4.5 V VDS=VGS, ID=2 mA

Drain-source
on-state resistance

RDS(ON)
  0.032 0.038
Ω
VGS=10 V, ID=40 A
  0.083   VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current
IGSS
    100
nA
VGS=30 V
    -100 VGS=-30 V
Drain-source leakage current IDSS     10 μA VDS=650 V, VGS=0 V
Gate resistance RG   2.1   Ω ƒ=1 MHz, Open drain

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   9276   pF
VGS=0 V, VDS=50 V,
ƒ=100 kHz
Output capacitance Coss   486   pF
Reverse transfer capacitance Crss   12.8   pF
Effective output capacitance, energy related Co(er)   278   pF
VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related Co(tr)   1477   pF
Turn-on delay time td(on)   55.9   ns
VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time tr   121.2   ns
Turn-off delay time td(off)   114.2   ns
Fall time tf   8.75   ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   175.0   nC

VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge Qgs   40.1   nC
Gate-drain charge Qgd   76.1   nC
Gate plateau voltage Vplateau   6.4   V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.3 V IS=80 A, VGS=0 V
Reverse recovery time trr   180   ns
IS=30 A,
di/dt=100 A/μs
Reverse recovery charge Qrr   1.5   uC
Peak reverse recovery current Irrm   15.2   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
  5. VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.
RoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power MosfetRoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power MosfetRoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power MosfetRoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power MosfetRoHS Server Power Supplys Osg90r1K2FF To220f High Voltage Power Mosfet

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