Description: | Extremely Low Switching Loss |
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Characteristics: | Excellent Stability and Uniformity |
Applications: | PC Power |
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Product Name | Package | Marking |
OSG65R038HZF | TO247 | OSG65R038HZ |
Parameter | Symbol | Value | Unit |
Drain-source voltage | VDS | 650 | V |
Gate-source voltage | VGS | ±30 | V |
Continuous drain current1), TC=25 °C | ID |
80 | A |
Continuous drain current1), TC=100 °C | 50 | ||
Pulsed drain current2), TC=25 °C | ID, pulse | 240 | A |
Continuous diode forward current1), TC=25 °C | IS | 80 | A |
Diode pulsed current2), TC=25 °C | IS, pulse | 240 | A |
Power dissipation3) ,TC=25 °C | PD | 500 | W |
Single pulsed avalanche energy5) | EAS | 2900 | mJ |
MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 100 | V/ns |
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 50 | V/ns |
Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Parameter | Symbol | Value | Unit |
Thermal resistance, junction-case | RθJC | 0.25 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage |
BVDSS |
650 | V |
VGS=0 V, ID=2 mA | ||
700 | 770 | VGS=0 V, ID=2 mA, Tj=150 °C | ||||
Gate threshold voltage |
VGS(th) | 3.0 | 4.5 | V | VDS=VGS, ID=2 mA | |
Drain-source on-state resistance |
RDS(ON) |
0.032 | 0.038 | Ω |
VGS=10 V, ID=40 A | |
0.083 | VGS=10 V, ID=40 A, Tj=150 °C | |||||
Gate-source leakage current | IGSS |
100 | nA |
VGS=30 V | ||
-100 | VGS=-30 V | |||||
Drain-source leakage current | IDSS | 10 | μA | VDS=650 V, VGS=0 V | ||
Gate resistance | RG | 2.1 | Ω | ƒ=1 MHz, Open drain |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Ciss | 9276 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz |
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Output capacitance | Coss | 486 | pF | |||
Reverse transfer capacitance | Crss | 12.8 | pF | |||
Effective output capacitance, energy related | Co(er) | 278 | pF | VGS=0 V, VDS=0 V-400 V |
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Effective output capacitance, time related | Co(tr) | 1477 | pF | |||
Turn-on delay time | td(on) | 55.9 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A |
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Rise time | tr | 121.2 | ns | |||
Turn-off delay time | td(off) | 114.2 | ns | |||
Fall time | tf | 8.75 | ns |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | 175.0 | nC | VGS=10 V, VDS=400 V, ID=40 A |
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Gate-source charge | Qgs | 40.1 | nC | |||
Gate-drain charge | Qgd | 76.1 | nC | |||
Gate plateau voltage | Vplateau | 6.4 | V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode forward voltage | VSD | 1.3 | V | IS=80 A, VGS=0 V | ||
Reverse recovery time | trr | 180 | ns | IS=30 A, di/dt=100 A/μs |
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Reverse recovery charge | Qrr | 1.5 | uC | |||
Peak reverse recovery current | Irrm | 15.2 | A |