Telecom Power Semiconductor Mosfet To263

• Certification: RoHS, ISO
• Encapsulation Structure: Plastic Sealed Transistor
• Installation: Plug-in Triode
• Model NO.: OSG70R250KSF
• Working Frequency: High Frequency
• Power Level: Medium Power
• Function: Power Triode, Switching Triode
• Structure: NPN
• Material: Silicon
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications: PC Power
• Industries: LED Lighting
• Application: Car Inverter
• Transport Package: Carton
• Specification: TO263
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20K/Monthly
• Package Size: 59.00cm * 34.00cm * 16.00cm
• Package Gross Weight: 15.000kg

Product Description

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS®  S series is optimized for its switching characteristics to achieve aggressive EMI standards. It is easy to use for smaller power supply systems to meet the both efficiency and EMI standards.

Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent stability and uniformity

Applications
. PC power
. LED lighting
. Telecom power
.  Server power
. EV Charger
.  Solar/UPS

Key Performance Parameters

 

Parameter	Value	Unit
VDS	700	V
ID, pulse	38	A
RDS(ON) , max @ VGS=10V	250	mΩ
Qg	39	nC

Marking Information

 

Product Name	Package	Marking
OSG70R250KSF	TO263	OSG70R250KS

Package & Pin Information
 

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	700	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	17	A
Continuous drain current1) , TC=100 °C		10.8
Pulsed drain current2) , TC=25 °C	ID, pulse	38	A
Continuous diode forward current1) , TC=25 °C	IS	17	A
Diode pulsed current2) , TC=25 °C	IS, pulse	38	A
Power dissipation3) , TC=25 °C	PD	163	W
Single pulsed avalanche energy5)	EAS	243	mJ
MOSFET dv/dt ruggedness, VDS=0…640 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…640 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.77	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	700			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	2.9		3.9	V	VDS=VGS , ID=250 μA
Drain-source on- state resistance	RDS(ON)		0.17	0.25	Ω	VGS=10 V, ID=8.5 A
			0.44			VGS=10 V, ID=8.5 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				- 100		VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=700 V, VGS=0 V
Gate resistance	RG		9		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		1750		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		200		pF
Reverse transfer capacitance	Crss		13		pF
Turn-on delay time	td(on)		17		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=8 A
Rise time	tr		14		ns
Turn-off delay time	td(off)		64		ns
Fall time	tf		11		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		39		nC	VGS=10 V, VDS=400 V, ID=8 A
Gate-source charge	Qgs		9		nC
Gate-drain charge	Qgd		15		nC
Gate plateau voltage	Vplateau		5.3		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=17 A, VGS=0 V
Reverse recovery time	trr		294		ns	VR =400 V, IS=8 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		4		μC
Peak reverse recovery current	Irrm		25		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in 2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS=10 V, L=75 mH, starting Tj=25 °C.