Telecom Power Extremely Low Switching Loss Mosfet

Product Description

Product Description

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features                                                                                                   

• Low RDS(on) & FOM
• Extremely low switching loss
• Excellent stability and uniformity
• Ultra-fast and robust body diode
• AEC-Q101 Qualified for Automotive Application

Applications

• PC power
• Telecom power
• Server power
• EV Charger
• Motor driver

Key Performance Parameters

 

Parameter	Value	Unit
VDS	650	V
ID, pulse	240	A
RDS(ON), max @ VGS=10V	38	mΩ
Qg	175	nC

Marking Information

 

Product Name	Package	Marking
OSG65R038HZAF	TO247	OSG65R038HZA

Package & Pin Information
 

 The HTRB test was performed at 600V more strictly than the AEC-Q101 rev.C (80% V(BR)DSS). All the other tests were performed according to AEC Q101 rev. E.

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	80	A
Continuous drain current^1), TC=100 °C		50
Pulsed drain current^2), TC=25 °C	ID, pulse	240	A
Continuous diode forward current^1), TC=25 °C	IS	80	A
Diode pulsed current^2), TC=25 °C	IS, pulse	240	A
Power dissipation^3) ,TC=25 °C	PD	500	W
Single pulsed avalanche energy5)	EAS	2048	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	100	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.25	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=2 mA
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=2 mA
Drain-source on-state resistance	RDS(ON)		0.032	0.038	Ω	VGS=10 V, ID=40 A
			0.083			VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		2.1		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		9276		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		486		pF
Reverse transfer capacitance	Crss		12.8		pF
Effective output capacitance, energy related	Co(er)		278		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		1477		pF
Turn-on delay time	td(on)		55.9		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		121.2		ns
Turn-off delay time	td(off)		114.2		ns
Fall time	tf		8.75		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		175.0		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		40.1		nC
Gate-drain charge	Qgd		76.1		nC
Gate plateau voltage	Vplateau		6.4		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		180		ns	IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.5		uC
Peak reverse recovery current	Irrm		15.2		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.