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Sic Diode To247 Ost75n65hswf Vces-650V Maximum Junction Temperature175, N-Channel Power IGBT
| FOB Price: | US$0.60-1.60 / Piece |
|---|---|
| Min. Order: | 330 Pieces |
| Min. Order | FOB Price |
|---|---|
| 330 Pieces | US$0.60-1.60 |
| Port: | Shanghai, China |
|---|---|
| Production Capacity: | Over 1kk/Month |
| Payment Terms: | T/T |
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Product Description
Company Info
Address:
South Building 3-503, No.396, Xinfu Rd, Minhang District, Shanghai, China
Business Type:
Manufacturer/Factory, Trading Company
Business Range:
Auto, Motorcycle Parts & Accessories, Consumer Electronics, Industrial Equipment & Components, Lights & Lighting
Management System Certification:
ISO 9001, ISO 14001
Company Introduction:
Founded in 2009, Winture has been deeply engaged in the Mosfet transistor and industrial Connectors for 15 years and has been a close partner and high-qualified supplier of the worldwide top 500 and emerging Chinese manufacturers. About Oriental Semiconductor, it is a tens of billions of chip listed companies and manufacturers in China, with a strong R & D team and design capabilities, is developing rapidly. Currently, Winture is the only overseas trading company for Oriental Semiconductor′s North American market and the Asia-Pacific region. Winture focus on developing the market of high-voltage super junction MOSFET, medium and low-voltage shielded gate MOSFET, super silicon MOSFET and Tri gate IGBT. Winture has the excellent and sufficient market research in high-performance power device as well as the design ability. And always focused on the industrial and automotive applications represented by new energy vehicle DC charging piles, on board chargers, 5G base station power supply and communication power supply, photovoltaic inverter and energy storage, data center server power supply and industrial lighting power supply. Winture has a long term strategic cooperation with relevant leading manufacturers.
With deep technical accumulation in the field of devices as a core semiconductor technology, focusing on semiconductor device technology innovation, has a number of core patents for semiconductor devices. In the second half of 2013, the technical paper of Oriental Semiconductor Semiconductor′s original semi-floating gate device was published in the American journal Science, marking a major breakthrough for domestic scientists in the direction of semiconductor core technology, and the news broadcast, People′s Daily and other media have made headline key reports, which has attracted great attention from the industry at home and abroad. In 2016, the core chip for DC high-power charging pile for new energy vehicles independently developed by Oriental Semiconductor was successfully mass-produced, breaking the monopoly of foreign manufacturers. At present, Oriental Semiconductor has become a leader in the field of high-performance power semiconductors in China, and has taken a solid step in replacing imported semiconductor products in the field of new energy, and its products have entered a number of international first-line customers and have been well received by customers. So far, in EV charging field, 80% manufacture choose us. In terms of chips for photovoltaic inverters, Oriental Semiconductor chips have been steadily supplied for some very famous USA manufacturers. Advanced patented Trident-Gate Bipolar Transistor (TGBT™ ) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for MID to high range switching frequency converters.
Winture aim: To reduce the production cost with stable and cost-effective products
More environmentally friendly and less noise
Excellent stability and uniformity
Extremely low switching loss
Low RDS(ON) & FOM
Fast and soft antiparallel diode
With deep technical accumulation in the field of devices as a core semiconductor technology, focusing on semiconductor device technology innovation, has a number of core patents for semiconductor devices. In the second half of 2013, the technical paper of Oriental Semiconductor Semiconductor′s original semi-floating gate device was published in the American journal Science, marking a major breakthrough for domestic scientists in the direction of semiconductor core technology, and the news broadcast, People′s Daily and other media have made headline key reports, which has attracted great attention from the industry at home and abroad. In 2016, the core chip for DC high-power charging pile for new energy vehicles independently developed by Oriental Semiconductor was successfully mass-produced, breaking the monopoly of foreign manufacturers. At present, Oriental Semiconductor has become a leader in the field of high-performance power semiconductors in China, and has taken a solid step in replacing imported semiconductor products in the field of new energy, and its products have entered a number of international first-line customers and have been well received by customers. So far, in EV charging field, 80% manufacture choose us. In terms of chips for photovoltaic inverters, Oriental Semiconductor chips have been steadily supplied for some very famous USA manufacturers. Advanced patented Trident-Gate Bipolar Transistor (TGBT™ ) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for MID to high range switching frequency converters.
Winture aim: To reduce the production cost with stable and cost-effective products
More environmentally friendly and less noise
Excellent stability and uniformity
Extremely low switching loss
Low RDS(ON) & FOM
Fast and soft antiparallel diode
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