LED Lighting Pdfn 8*8 Package N-Channel 800W 300V Power Semiconductor

• Application: Refrigerator
• Batch Number: 2010+
• Manufacturing Technology: Discrete Device
• Model NO.: OSG80R300JF
• Material: Element Semiconductor
• Model: ULN2003
• Package: PGA(Pin Grid Array Package)
• Signal Processing: Digital
• Type: N-Type Semiconductor
• P/N: Osg80r300jf
• Packing: Pdfn 8*8
• Applications: LED Lighting
• Features: Excellent Stability and Uniformity
• Brand: Osg80r300jf
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month
• Package Size: 59.00cm * 39.00cm * 16.00cm
• Package Gross Weight: 19.000kg

Product Description

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The  GreenMOS®   Generic  series  is  optimized  for  extreme  switching  performance  to  minimize switching  loss.  It  is  tailored for  high  power  density applications  to  meet the  highest  efficiency standards.

Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent stability and uniformity

Applications
. PC power
. LED lighting
. Telecom power
.  Server power
. EV Charger
.  Solar/UPS

Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	850	V
ID, pulse	45	A
RDS(ON) , max @ VGS=10V	300	mΩ
Qg	23.3	nC

Marking Information
 

Product Name	Package	Marking
OSG80R300JF	PDFN 8×8	OSG80R300J

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	800	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	15	A
Continuous drain current1) , TC=100 °C		9.5
Pulsed drain current2) , TC=25 °C	ID, pulse	45	A
Continuous diode forward current1) , TC=25 °C	IS	15	A
Diode pulsed current2) , TC=25 °C	IS, pulse	45	A
Power dissipation3) , TC=25 °C	PD	151	W
Single pulsed avalanche energy5)	EAS	360	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.83	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	800			V	VGS=0 V, ID=250 μA
		850				VGS=0 V, ID=250 μA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.9		3.9	V	VDS=VGS , ID=250 μA
Drain-source on- state resistance	RDS(ON)		0.24	0.3	Ω	VGS=10 V, ID=7.5 A
			0.64			VGS=10 V, ID=7.5 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				- 100		VGS=-30 V
Drain-source leakage current	IDSS			5	μA	VDS=800 V, VGS=0 V
Gate resistance	RG		18.2		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		1552		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		80.1		pF
Reverse transfer capacitance	Crss		2.1		pF
Turn-on delay time	td(on)		33.6		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=7.5 A
Rise time	tr		20.3		ns
Turn-off delay time	td(off)		57.9		ns
Fall time	tf		4.5		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		22.7		nC	VGS=10 V, VDS=400 V, ID=7.5 A
Gate-source charge	Qgs		8.6		nC
Gate-drain charge	Qgd		2.3		nC
Gate plateau voltage	Vplateau		5.5		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=15 A, VGS=0 V
Reverse recovery time	trr		313.7		ns	VR =400 V, IS=7.5 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		4.2		μC
Peak reverse recovery current	Irrm		25.2		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.






Supply Chain

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