Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet

Product Details
Certification: RoHS, ISO
Shape: Metal Porcelain Tube
Shielding Type: Sharp Cutoff Shielding Tube
Gold Member Since 2022

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Registered Capital
10000000 RMB
Plant Area
501~1000 square meters
  • Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet
  • Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet
  • Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet
  • Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet
  • Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet
  • Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet
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Basic Info.

Model NO.
SFS15R07PNF
Cooling Method
Air Cooled Tube
Function
Switch Transistor
Working Frequency
High Frequency
Structure
Planar
Encapsulation Structure
Chip Transistor
Power Level
High Power
Material
Silicon
Trademark
Orientalsemi
HS Code
8541290000
Production Capacity
Over 1kk/Month

Product Description

 




General Description
FSMOS®   MOSFET  is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V .



Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery



Applications
      PD charger
      Motor driver
      Switching voltage regulator
      DC-DC convertor
      Switching mode power supply



Key Performance Parameters
Parameter Value Unit
VDS 150 V
ID, pulse 720 A
RDS(ON), max @ VGS =10V 7 mΩ
Qg 107 nC



Absolute Maximum Ratings at Tj =25°C unless otherwise noted
Parameter Symbol Value Unit
Drain-source voltage VDS 150 V
Gate-source voltage VGS ±20 V
Continuous drain current1) , TC=25 °C ID 180 A
Pulsed drain current2) , TC=25 °C ID, pulse 720 A
Continuous diode forward current1) , TC=25 °C IS 180 A
Diode pulsed current2) , TC=25 °C IS, pulse 720 A
Power dissipation3), TC=25 °C PD 450 W
Single pulsed avalanche energy5) EAS 118 mJ
Operation and storage temperature Tstg , Tj -55 to 150 °C



Thermal Characteristics
Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 0.27 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W



Electrical Characteristics at Tj =25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source          breakdown voltage BVDSS 150     V VGS =0 V, ID =250 μA
Gate threshold
voltage
VGS(th) 3   4.5 V VDS =VGS , ID =250 μA
Drain-source
on-state resistance
RDS(ON)   4.4 7 mΩ VGS =10 V, ID=60 A
Gate-source
leakage current

IGSS
    100
nA
VGS =20 V
    - 100 VGS =-20 V
Drain-source
leakage current
IDSS     1 μA VDS =120 V, VGS =0 V
Gate resistance RG   1.7   Ω ƒ=1 MHz, Open drain



Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   7010   pF
VGS =0 V,
VDS =25 V,
ƒ=100 kHz
Output capacitance Coss   4240   pF
Reverse transfer capacitance Crss   158   pF
Turn-on delay time td(on)   26   ns
VGS =10 V,
VDS =80 V,
RG=2 Ω,
ID=40 A
Rise time tr   23   ns
Turn-off delay time td(off)   46   ns
Fall time tf   17   ns



Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   107   nC
VGS =10 V,
VDS =80 V,
ID=40A
Gate-source charge Qgs   37   nC
Gate-drain charge Qgd   17   nC
Gate plateau voltage Vplateau   5.6   V




Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.3 V IS=20 A,
VGS =0 V
Reverse recovery time trr   145   ns
VR=80 V,
IS=40 A,
di/dt=100 As
Reverse recovery charge Qrr   463   nC
Peak reverse recovery current Irrm   5.8   A


Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    VDD=50V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.





 
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Green Product Declaration

Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet
Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power MosfetTransistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet
Transistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power MosfetTransistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power MosfetTransistor Enhancement to-220-3L Sfs15r07pnf Vds-150 ID-720A RDS (ON) -7milliohm Qg-107ncn-Channel Power Mosfet

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