Osg60r035tt5zf Vds-600V ID-140A RDS (ON) -35milliohm Qg-106nc LED Lighting Mosfet

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Remote Cut-Off Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: OSG60R035TT5ZF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x35cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.


Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity


Applications
      LED lighting
      Telecom
      Adapter
      Sever
      Solar/UPS


Key Performance Parameters

Parameter	Value	Unit
VDS	600	V
ID, pulse	140	A
RDS(ON), max @ VGS =10V	35	mΩ
Qg	106	nC

Marking Information
 

Product Name	Package	Marking
OSG60R035TT5ZF	TOLL	OSG60R035TT5Z

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	600	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	68	A
Continuous drain current1) , TC=100 °C		43
Pulsed drain current2) , TC=25 °C	ID, pulse	140	A
Continuous diode forward current1) , TC=25 °C	IS	68	A
Diode pulsed current2) , TC=25 °C	IS, pulse	140	A
Power dissipation3) , TC=25 °C	PD	350	W
Single pulsed avalanche energy5)	EAS	250	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.36	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	600			V	VGS =0 V, ID =2 mA
Gate threshold voltage	VGS(th)	3.0		5.0	V	VDS =VGS , ID =2 mA
Drain-source on- state resistance	RDS(ON)		32	35	mΩ	VGS =10 V, ID=25 A
			78			VGS =10 V, ID=25 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			10	μA	VDS =600 V, VGS =0 V
Gate resistance	RG		1.3		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		4180		pF	VGS =0 V, VDS =50 V, ƒ=100 kHz
Output capacitance	Coss		278		pF
Reverse transfer capacitance	Crss		5.3		pF
Effective output capacitance, energy related	Co(er)		183		pF	VGS =0 V,          VDS =0 V-400 V
Effective output capacitance, time related	Co(tr)		1060		pF
Turn-on delay time	td(on)		27		ns	VGS =10 V, VDS =400 V, RG=2 Ω, ID=20 A
Rise time	tr		9		ns
Turn-off delay time	td(off)		79		ns
Fall time	tf		2		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		106		nC	VGS =10 V, VDS =400 V, ID=20 A
Gate-source charge	Qgs		22		nC
Gate-drain charge	Qgd		43		nC
Gate plateau voltage	Vplateau		6.1		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=25 A, VGS =0 V
Reverse recovery time	trr		174		ns	VR =400 V, IS=20 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1		uC
Peak reverse recovery current	Irrm		11.4		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=80 mH, starting Tj =25 °C.



Supply Chain

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