Pdfn5X6 Sfse2r015GF Vds-25 ID-800A N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: SFSE2R015GF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
FSMOS®  MOSFET is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics . The low Vth  series is specially optimized for synchronous rectification systems with low driving voltage.
 

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery



Applications
      PD charger
      Motor driver
      Switching voltage regulator
      DC-DC convertor
      Switched mode power supply



Key Performance Parameters

Parameter	Value	Unit
VDS, min	25	V
ID, pulse	800	A
RDS(ON) , max @ VGS=10V	1.5	mΩ
Qg	114	nC

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	25	V
Gate-source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	200	A
Pulsed drain current2) , TC=25 °C	ID, pulse	800	A
Continuous diode forward current1) , TC=25 °C	IS	200	A
Diode pulsed current2) , TC=25 °C	IS, pulse	800	A
Power dissipation3), TC=25 °C	PD	149	W
Single pulsed avalanche energy5)	EAS	228	mJ
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.84	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source         breakdown voltage	BVDSS	25			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	1.3		2.5	V	VDS=VGS, ID=250 μA
Drain-source on-state resistance	RDS(ON)		1.0	1.5	mΩ	VGS=10 V, ID=20 A
Drain-source on-state resistance	RDS(ON)		1.4	2.5	mΩ	VGS=4.5 V, ID=20 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				-100		VGS=-20 V
Drain-source leakage current	IDSS			1	μA	VDS=20 V, VGS=0 V
Gate resistance	RG		3.4		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		7570		pF	VGS=0 V, VDS=25 V, ƒ=100 kHz
Output capacitance	Coss		3230		pF
Reverse transfer capacitance	Crss		125		pF
Turn-on delay time	td(on)		12.9		ns	VGS=10 V, VDS=20 V, RG=2 Ω, ID=40 A
Rise time	tr		10.1		ns
Turn-off delay time	td(off)		84.6		ns
Fall time	tf		47.2		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		114		nC	VGS=10 V, VDS=20 V, ID=40 A
Gate-source charge	Qgs		22.2		nC
Gate-drain charge	Qgd		18.9		nC
Gate plateau voltage	Vplateau		3.4		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS=0 V
Reverse recovery time	trr		81.2		ns	VR=20 V, IS=40 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		115		nC
Peak reverse recovery current	Irrm		2.6		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in square FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.




 

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