Pdfn5*6 Sfg10s08GF Vds-100V ID-210A Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: PDFN5*6 SFG10S08GF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description

SFGMOS^® MOSFET is based on Oriental Semiconductor's unique device design to achieve low R_DS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low V_th series is specially designed to use in synchronous rectification power systems with low driving voltage.
 

Features

• Low R_DS(ON) & FOM
• Extremely low switching loss
• Excellent reliability and uniformity
• Fast switching and soft recovery

 

Applications

• PD charger
• Motor driver
• Switching voltage regulator
• DC-DC convertor
• Switched mode power supply

 

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	100	V
ID, pulse	210	A
RDS(ON) max @ VGS=10V	8	mΩ
Qg	49.9	nC

Marking Information

 

Product Name	Package	Marking
SFG10S08GF	PDFN5*6	SFG10S08G

 

Absolute Maximum Ratings at T_j=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	100	V
Gate source voltage	VGS	±20	V
Continuous drain current^1), TC=25 °C	ID	70	A
Pulsed drain current^2), TC=25 °C	ID, pulse	210	A
Continuous diode forward current^1), TC=25 °C	IS	70	A
Diode pulsed current^2), TC=25 °C	IS, Pulse	210	A
Power dissipation^3), TC=25 °C	PD	100	W
Single pulsed avalanche energy^5)	EAS	100	mJ
Operation and storage temperature	Tstg,Tj	-55 to 150	°C

 

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.25	°C/W
Thermal resistance, junction-ambient^4)	RθJA	62	°C/W

Electrical Characteristics at T_j=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	100			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	1.0		2.5	V	VDS=VGS, ID=250 μA
Drain-source on-state resistance	RDS(ON)		7	8	mΩ	VGS=10 V, ID=30 A
Drain-source on-state resistance	RDS(ON)		8	10	mΩ	VGS=4.5 V, ID=12 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				-100		VGS=-20 V
Drain-source leakage current	IDSS			1	μA	VDS=100 V, VGS=0 V
Gate resistance	RG		5.2		Ω	ƒ=1 MHz, Open drain

 

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		2604		pF	VGS=0 V, VDS=50 V, ƒ=1 MHz
Output capacitance	Coss		361		pF
Reverse transfer capacitance	Crss		6.5		pF
Turn-on delay time	td(on)		20.6		ns	VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=25 A
Rise time	tr		5		ns
Turn-off delay time	td(off)		51.8		ns
Fall time	tf		9		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		49.9		nC	VGS=10 V, VDS=50 V, ID=25 A
Gate-source charge	Qgs		6.5		nC
Gate-drain charge	Qgd		12.4		nC
Gate plateau voltage	Vplateau		3.4		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=30 A, VGS=0 V
Reverse recovery time	trr		60.4		ns	VR=50 V, IS=12 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		106		nC
Peak reverse recovery current	Irrm		3		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of R_θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T_a=25 °C.
5. V_DD=30 V,V_GS=10 V, L=0.3 mH, starting T_j=25 °C.

 

Supply Chain

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