LED Lighting To220f Osg70r500FF Vds-750V ID-30A RDS (ON) -500milliohm Qg-12.3nc N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Subminiature
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO220F OSG70R500FF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The  GreenMOS®   Generic  series  is  optimized  for  extreme  switching  performance  to  minimize switching  loss.  It  is tailored for  high  power density applications  to  meet the  highest  efficiency standards.

 Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      PC power
      LED lighting
      Telecom power
      Server power
      EV Charger
      Solar/UPS

Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	750	V
ID, pulse	30	A
RDS(ON) , max @ VGS =10V	500	mΩ
Qg	12.3	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	700	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	10	A
Continuous drain current1) , TC=100 °C		6.3
Pulsed drain current2) , TC=25 °C	ID, pulse	30	A
Continuous diode forward current1) , TC=25 °C	IS	10	A
Diode pulsed current2) , TC=25 °C	IS, pulse	30	A
Power dissipation3) , TC=25 °C	PD	31	W
Single pulsed avalanche energy5)	EAS	272	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	4	°C/W
Thermal resistance, junction-ambient4)	RθJA	62.5	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	700			V	VGS =0 V, ID =250 μA
		750	810			VGS =0 V, ID =250 μA, Tj =150 °C
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS =VGS , ID =250 μA
Drain-source on- state resistance	RDS(ON)		0.40	0.50	Ω	VGS =10 V, ID=5 A
			1.1			VGS =10 V, ID=5 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			1	μA	VDS =700 V, VGS =0 V

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=10.8 mH, starting Tj =25 °C.





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