Interleaved LLC Topologies Osg65r038htzf To247 High Voltage Power Mosfet

• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications: PC Power
• Model NO.: OSG65R038HTZF TO247
• Industries: LED Lighting
• Type: Fast EV Charging Station
• Certification: ISO, TUV, RoHS
• Warranty: 24 Months
• Transport Package: Carton
• Specification: 35x37x30cm
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20kkkk/Monthly

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features

• Low RDS(ON) & FOM
• Extremely low switching loss
• Excellent stability and uniformity
• Ultra-fast and robust body diode

Applications                                                                                            

• PC power
• Telecom power
• Server power
• EV Charger
• Motor driver

Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	240	A
RDS(ON), max @ VGS=10V	38	mΩ
Qg	157.5	nC

Marking Information
 

Product Name	Package	Marking
OSG65R038HTZF	TO247	OSG65R038HTZ

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	80	A
Continuous drain current^1), TC=100 °C		50.6
Pulsed drain current^2), TC=25 °C	ID, pulse	240	A
Continuous diode forward current^1), TC=25 °C	IS	80	A
Diode pulsed current^2), TC=25 °C	IS, pulse	240	A
Power dissipation^3) ,TC=25 °C	PD	450	W
Single pulsed avalanche energy5)	EAS	2071	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.28	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=1 mA
		700				VGS=0 V, ID=1 mA, Tj=150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=2 mA
Drain-source on- state resistance	RDS(ON)		0.03	0.038	Ω	VGS=10 V, ID=40 A
			0.078			VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		8281		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		399.8		pF
Reverse transfer capacitance	Crss		13		pF
Effective output capacitance, energy related	Co(er)		250.2		pF	VGS = 0V, VDS = 0V-400V
Effective output capacitance, time related	Co(tr)		1321		pF
Turn-on delay time	td(on)		52.3		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		69.2		ns
Turn-off delay time	td(off)		106.4		ns
Fall time	tf		8.3		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		157.5		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		54.2		nC
Gate-drain charge	Qgd		47.7		nC
Gate plateau voltage	Vplateau		6.4		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		213.2		ns	VR=400 V IS=40 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.5		uC
Peak reverse recovery current	Irrm		13.1		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=100 V, VGS=10 V, L=79.9 mH, starting Tj=25 °C.