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| Shape: | Metal Porcelain Tube |
| Shielding Type: | Sharp Cutoff Shielding Tube |
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| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 100 | V |
| ID, pulse | 450 | A |
| RDS(ON), max @ VGS=10V | 3.5 | mΩ |
| Qg | 87.8 | nC |
| Product Name | Package | Marking |
| SFG150N10PF | TO220 | SFG150N10P |
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 100 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 150 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 450 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 150 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 450 | A |
| Power dissipation3) , TC=25 °C | PD | 250 | W |
| Single pulsed avalanche energy5) | EAS | 265 | mJ |
| Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.5 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage |
BVDSS | 100 | V | VGS=0 V, ID=250 μA | ||
| Gate threshold voltage |
VGS(th) | 2.0 | 4.0 | V | VDS=VGS , ID=250 μA | |
| Drain-source on-state resistance |
RDS(ON) | 3.22 | 3.50 | mΩ | VGS=10 V, ID=30 A | |
| Gate-source leakage current |
IGSS |
100 | nA |
VGS=20 V | ||
| - 100 | VGS=-20 V | |||||
| Drain-source leakage current |
IDSS | 1 | μA | VDS=100 V, VGS=0 V | ||
| Gate resistance | RG | 4.9 | Ω | ƒ=1 MHz, Open drain |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 6850 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz |
||
| Output capacitance | Coss | 3170 | pF | |||
| Reverse transfer capacitance | Crss | 251 | pF | |||
| Turn-on delay time | td(on) | 32 | ns | VGS=10 V, VDS=50 V, RG=2 Ω, ID=65 A |
||
| Rise time | tr | 138 | ns | |||
| Turn-off delay time | td(off) | 88 | ns | |||
| Fall time | tf | 106 | ns |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 87.8 | nC | VGS=10 V, VDS=50 V, ID=65 A |
||
| Gate-source charge | Qgs | 27.1 | nC | |||
| Gate-drain charge | Qgd | 22.9 | nC | |||
| Gate plateau voltage | Vplateau | 5.5 | V |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=30 A, VGS=0 V |
||
| Reverse recovery time | trr | 158 | ns | VR=50 V, IS=65 A, di/dt=100 A/μs |
||
| Reverse recovery charge | Qrr | 437 | nC | |||
| Peak reverse recovery current | Irrm | 5 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.
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