Battery Protection Mosfet Excellent Stability and Uniformity

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: SFG150N10PF
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Structure: Planar
• Encapsulation Structure: Plastic Sealed Transistor
• Power Level: Medium Power
• Material: Silicon
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications: PC Power
• Industries: LED Lighting
• Type: Fast EV Charging Station
• Warranty: 24 Months
• Transport Package: Carton
• Specification: TO247
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20K/Monthly
• Package Size: 35.00cm * 35.00cm * 15.00cm
• Package Gross Weight: 2.000kg

Product Description

Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth  series is specially  optimized for high systems with gate driving voltage greater than 10V.

Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent stability and uniformity
. Fast switching and soft recovery

Applications
. Switched mode power supply
. Motor driver
. Battery protection
. DC-DC convertor
.  Solar inverter
. UPS and energy inverter

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	100	V
ID, pulse	450	A
RDS(ON), max @ VGS=10V	3.5	mΩ
Qg	87.8	nC

Marking Information

 

Product Name	Package	Marking
SFG150N10PF	TO220	SFG150N10P

Package & Pin information

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	100	V
Gate source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	150	A
Pulsed drain current2) , TC=25 °C	ID, pulse	450	A
Continuous diode forward current1) , TC=25 °C	IS	150	A
Diode pulsed current2) , TC=25 °C	IS, pulse	450	A
Power dissipation3) , TC=25 °C	PD	250	W
Single pulsed avalanche energy5)	EAS	265	mJ
Operation and storage temperature	Tstg ,Tj	-55 to 150	°C

Thermal Characteristics

 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.5	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	100			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS=VGS , ID=250 μA
Drain-source on-state resistance	RDS(ON)		3.22	3.50	mΩ	VGS=10 V, ID=30 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				- 100		VGS=-20 V
Drain-source leakage current	IDSS			1	μA	VDS=100 V, VGS=0 V
Gate resistance	RG		4.9		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		6850		pF	VGS=0 V, VDS=25 V, ƒ=100 kHz
Output capacitance	Coss		3170		pF
Reverse transfer capacitance	Crss		251		pF
Turn-on delay time	td(on)		32		ns	VGS=10 V, VDS=50 V, RG=2 Ω, ID=65 A
Rise time	tr		138		ns
Turn-off delay time	td(off)		88		ns
Fall time	tf		106		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		87.8		nC	VGS=10 V, VDS=50 V, ID=65 A
Gate-source charge	Qgs		27.1		nC
Gate-drain charge	Qgd		22.9		nC
Gate plateau voltage	Vplateau		5.5		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=30 A, VGS=0 V
Reverse recovery time	trr		158		ns	VR=50 V, IS=65 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		437		nC
Peak reverse recovery current	Irrm		5		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.