Mosfet LED Strip with Low RDS (ON)

• Certification: RoHS, ISO
• Encapsulation Structure: Plastic Sealed Transistor
• Installation: Plug-in Triode
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: OSG60R060H4T3ZF TO247-4L
• Working Frequency: High Frequency
• Power Level: Medium Power
• Function: Power Triode, Switching Triode
• Structure: NPN
• Material: Silicon
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications: PC Power
• Industries: LED Lighting
• Transport Package: Air
• Specification: TO247-4L
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20K/Monthly
• Package Size: 59.00cm * 39.00cm * 15.00cm
• Package Gross Weight: 19.000kg

Product Description

Product Description

General Description

The GreenMOS^® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS^® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.


Features

• Low RDS(ON) & FOM
• Extremely low switching loss
• Excellent stability and uniformity

Applications

• PC power
• LED lighting
• Telecom power
• Server power
• EV Charger
• Solar/UPS

 

Key Performance Parameters
 

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent stability and uniformity

Applications
. LED lighting
. Adapter
. Telecom
.  Solar/UPS
. Sever

Key Performance Parameters



 

Parameter	Value	Unit
VDS	600	V
ID, pulse	156	A
RDS(ON), max @ VGS=10V	58	mΩ
Qg	83	nC

Marking Information
 

Product Name	Package	Marking
OSG60R060H4T3ZF	TO247-4L	OSG60R060H4T3Z

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	600	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	52	A
Continuous drain current1) , TC=100 °C		32.8
Pulsed drain current2) , TC=25 °C	ID, pulse	156	A
Continuous diode forward current1) , TC=25 °C	IS	52	A
Diode pulsed current2) , TC=25 °C	IS, pulse	156	A
Power dissipation3) , TC=25 °C	PD	440	W
Single pulsed avalanche energy4)	EAS	486	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.28	°C/W
Thermal resistance, junction-ambient	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	600			V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	3.0		5.0	V	VDS=VGS , ID=1 mA
Drain-source on-state resistance	RDS(ON)		52	58	mΩ	VGS=10 V, ID=26 A
			129			VGS=10 V, ID=26 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				- 100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=600 V, VGS=0 V
Gate resistance	RG		2		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		4257		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		210		pF
Reverse transfer capacitance	Crss		3		pF
Effective output capacitance, energy related	Co(er)		181		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		783		pF
Turn-on delay time	td(on)		30		ns	VGS=10 V, VDS=400 V, RG=5 Ω, ID=40 A
Rise time	tr		88		ns
Turn-off delay time	td(off)		65		ns
Fall time	tf		4		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		83		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		27		nC
Gate-drain charge	Qgd		29		nC
Gate plateau voltage	Vplateau		7.4		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=52 A, VGS=0 V
Reverse recovery time	trr		172		ns	VR =400 V, IS=40 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		911		nC
Peak reverse recovery current	Irrm		9.2		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance. 4)    VDD=100 V, VGS=10 V, L=75 mH, starting Tj=25 °C.