Power Mosfet To252 Osg80r650df Vds-850V ID-24A RDS (ON) -650milliohm Qg-12.1nc

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Model NO.: TO252 OSG80R650DF
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The  GreenMOS®   Generic  series  is  optimized  for  extreme  switching  performance  to  minimize switching  loss.  It  is tailored for  high  power density applications  to  meet the  highest  efficiency standards.

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      PC power
      LED lighting
      Telecom power
      Server power
      EV Charger
      Solar/UPS

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	850	V
ID, pulse	24	A
RDS(ON) , max @ VGS =10V	650	mΩ
Qg	12. 1	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	800	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	8	A
Continuous drain current1) , TC=100 °C		5
Pulsed drain current2) , TC=25 °C	ID, pulse	24	A
Continuous diode forward current1) , TC=25 °C	IS	8	A
Diode pulsed current2) , TC=25 °C	IS, pulse	24	A
Power dissipation3) , TC=25 °C	PD	83	W
Single pulsed avalanche energy5)	EAS	240	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.5	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	800			V	VGS =0 V, ID =250 μA
		850	930			VGS =0 V, ID =250 μA, Tj =150 °C
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS =VGS , ID =250 μA
Drain-source on- state resistance	RDS(ON)		0.55	0.65	Ω	VGS =10 V, ID=4 A
			1.48			VGS =10 V, ID=4 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			10	μA	VDS =800 V, VGS =0 V

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=20 mH, starting Tj =25 °C.


Ordering Information

Package Type	Units/ Reel	Reels/   Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO252-C	2500	2	5000	5	25000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OSG80R650DF	TO252	yes	yes	yes

Supply Chain

Green Product Declaration