Telecom Power Semiconductor Mosfet Osg55r290df

Product Details
Certification: RoHS, ISO
Shape: Metal Porcelain Tube
Shielding Type: Sharp Cutoff Shielding Tube
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Registered Capital
10000000 RMB
Plant Area
501~1000 square meters
  • Telecom Power Semiconductor Mosfet Osg55r290df
  • Telecom Power Semiconductor Mosfet Osg55r290df
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  • Overview
  • Product Description
Overview

Basic Info.

Cooling Method
Air Cooled Tube
Function
Switch Transistor
Working Frequency
High Frequency
Structure
Diffusion
Encapsulation Structure
Plastic Sealed Transistor
Power Level
High Power
Material
Silicon Wafers
Description
Extremely Low Switching Loss
Characteristics
Excellent Stability and Uniformity
Applications
PC Power
Industries
LED Lighting
Warranty
24 Months
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20K/Monthly

Product Description

Product Description

General Description

FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.


Features
  • Low RDS(ON) & FOM (Figure of Merit)
  • Extremely low switching loss                                                                 
  • Excellent reliability and uniformity
  • Fast switching and soft recovery
  • AEC-Q101 Qualified for Automotive Applications

Applications
  • Consumer electronic power supply
  • Motor control
  • Synchronous rectification
  • Isolated DC/DC convertor
  • Invertors


Key Performance Parameters

 
Parameter Value Unit
VDS 40 V
ID, pulse 600 A
RDS(ON) max @ VGS=10V 1.1
Qg 118.4 nC

Marking Information

 
Product Name Package Marking
SFS04R013UGF PDFN5 x 6 SFS04R013UG

 
 
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain source voltage VDS 40 V
Gate source voltage VGS ±20 V
Continuous drain current1), TC=25 °C ID 200 A
Pulsed drain current2), TC=25 °C ID, pulse 600 A
Continuous diode forward current1), TC=25 °C IS 200 A
Diode pulsed current2), TC=25 °C IS, Pulse 600 A
Power dissipation3), TC=25 °C PD 178 W
Single pulsed avalanche energy5) EAS 144 mJ
Operation and storage temperature Tstg,Tj -55 to 175 °C

Thermal Characteristics
 
Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 0.84 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source breakdown voltage BVDSS 40     V VGS=0 V, ID=250 μA
Gate threshold voltage VGS(th) 1.2   2.5 V VDS=VGS, ID=250 μA
Drain-source on- state resistance RDS(ON)   0.9 1.1 VGS=10 V, ID=20 A
Drain-source on- state resistance RDS(ON)   1.5 2.0 VGS=6 V, ID=20 A
Gate-source leakage current
IGSS
    100
nA
VGS=20 V
    -100 VGS=-20 V
Drain-source leakage current IDSS     1 uA VDS=40 V, VGS=0 V
Gate resistance RG   3.2   Ω ƒ=1 MHz, Open drain

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   5453   pF
VGS=0 V, VDS=25 V,
ƒ=100 kHz
Output capacitance Coss   1951   pF
Reverse transfer capacitance Crss   113   pF
Turn-on delay time td(on)   23.9   ns
VGS=10 V, VDS=40 V, RG=2 Ω, ID=40 A
Rise time tr   16.9   ns
Turn-off delay time td(off)   80.4   ns
Fall time tf   97.7   ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   85.6   nC

VGS=10 V VDS=40 V, ID=40 A,
Gate-source charge Qgs   17.6   nC
Gate-drain charge Qgd   14.5   nC
Gate plateau voltage Vplateau   3.6   V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.3 V IS=20 A, VGS=0 V
Reverse recovery time trr   71.1   ns
VR=40 V, IS=40 A,
di/dt=100 A/μs
Reverse recovery charge Qrr   50.1   nC
Peak reverse recovery current Irrm   1.2   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
VDD=30 V,VG=10 V, L=0.3 mH, starting Tj=25 °C.
Telecom Power Semiconductor Mosfet Osg55r290df


 
Telecom Power Semiconductor Mosfet Osg55r290dfTelecom Power Semiconductor Mosfet Osg55r290dfTelecom Power Semiconductor Mosfet Osg55r290df

Telecom Power Semiconductor Mosfet Osg55r290dfTelecom Power Semiconductor Mosfet Osg55r290df
Telecom Power Semiconductor Mosfet Osg55r290dfTelecom Power Semiconductor Mosfet Osg55r290dfTelecom Power Semiconductor Mosfet Osg55r290df


 

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