Basic Info.
Model NO.
OSG65R099HSZAF TO247
Description
Extremely Low Switching Loss
Characteristics
Excellent Stability and Uniformity
Trademark
Orientalsemiconductor
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features - Low RDS(on) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
- Ultra-fast and robust body diode
- AEC-Q101 Qualified for Automotive Application
Applications- PC power
- Telecom power
- Server power
- EV Charger
- Motor driver
Key Performance Parameters Parameter | Value | Unit |
VDS | 650 | V |
ID, pulse | 96 | A |
RDS(ON), max @ VGS=10V | 99 | mΩ |
Qg | 66.6 | nC |
Marking Information Product Name | Package | Marking |
OSG65R099HSZAF | TO247 | OSG65R099HSZA |
The HTRB test was performed at 600V more strictly than the AEC-Q101 rev.C (80% V(BR)DSS). All the other tests were performed according to AEC Q101 rev. E. Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter | Symbol | Value | Unit |
Drain-source voltage | VDS | 650 | V |
Gate-source voltage | VGS | ±30 | V |
Continuous drain current1), TC=25 °C | ID | 32 | A |
Continuous drain current1), TC=100 °C | 20 |
Pulsed drain current2), TC=25 °C | ID, pulse | 96 | A |
Continuous diode forward current1), TC=25 °C | IS | 32 | A |
Diode pulsed current2), TC=25 °C | IS, pulse | 96 | A |
Power dissipation3) ,TC=25 °C | PD | 278 | W |
Single pulsed avalanche energy5) | EAS | 648 | mJ |
MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 50 | V/ns |
Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics Parameter | Symbol | Value | Unit |
Thermal resistance, junction-case | RθJC | 0.45 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specifiedParameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 650 | | | V | VGS=0 V, ID=1 mA |
Gate threshold voltage | VGS(th) | 3.0 | | 4.5 | V | VDS=VGS, ID=1 mA |
Drain-source on- state resistance | RDS(ON) | | 0.090 | 0.099 | Ω | VGS=10 V, ID=16 A |
| 0.21 | | VGS=10 V, ID=16 A, Tj=150 °C |
Gate-source leakage current | IGSS | | | 100 | nA | VGS=30 V |
| | -100 | VGS=-30 V |
Drain-source leakage current | IDSS | | | 10 | μA | VDS=650 V, VGS=0 V |
Gate resistance | RG | | 7.8 | | Ω | ƒ=1 MHz, Open drain |
Dynamic CharacteristicsParameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Ciss | | 3988 | | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz |
Output capacitance | Coss | | 210 | | pF |
Reverse transfer capacitance | Crss | | 7.4 | | pF |
Effective output capacitance, energy related | Co(er) | | 124 | | pF | VGS=0 V, VDS=0 V-400 V |
Effective output capacitance, time related | Co(tr) | | 585 | | pF |
Turn-on delay time | td(on) | | 46.0 | | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=20 A |
Rise time | tr | | 60.3 | | ns |
Turn-off delay time | td(off) | | 93.0 | | ns |
Fall time | tf | | 3.7 | | ns |
Gate Charge CharacteristicsParameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | | 66.6 | | nC | VGS=10 V, VDS=400 V, ID=20 A |
Gate-source charge | Qgs | | 20.6 | | nC |
Gate-drain charge | Qgd | | 24.8 | | nC |
Gate plateau voltage | Vplateau | | 6.7 | | V |
Body Diode CharacteristicsParameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode forward voltage | VSD | | | 1.3 | V | IS=32 A, VGS=0 V |
Reverse recovery time | trr | | 151.7 | | ns | IS=20 A, di/dt=100 A/μs |
Reverse recovery charge | Qrr | | 1.0 | | μC |
Peak reverse recovery current | Irrm | | 12.3 | | A |
Note- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.
Address:
South Building 3-503, No.396, Xinfu Rd, Minhang District, Shanghai, China
Business Type:
Manufacturer/Factory, Trading Company
Business Range:
Auto, Motorcycle Parts & Accessories, Consumer Electronics, Industrial Equipment & Components, Lights & Lighting
Management System Certification:
ISO 9001, ISO 14001
Company Introduction:
Founded in 2009, Winture has been deeply engaged in the Mosfet transistor and industrial Connectors for 15 years and has been a close partner and high-qualified supplier of the worldwide top 500 and emerging Chinese manufacturers. About Oriental Semiconductor, it is a tens of billions of chip listed companies and manufacturers in China, with a strong R & D team and design capabilities, is developing rapidly. Currently, Winture is the only overseas trading company for Oriental Semiconductor′s North American market and the Asia-Pacific region. Winture focus on developing the market of high-voltage super junction MOSFET, medium and low-voltage shielded gate MOSFET, super silicon MOSFET and Tri gate IGBT. Winture has the excellent and sufficient market research in high-performance power device as well as the design ability. And always focused on the industrial and automotive applications represented by new energy vehicle DC charging piles, on board chargers, 5G base station power supply and communication power supply, photovoltaic inverter and energy storage, data center server power supply and industrial lighting power supply. Winture has a long term strategic cooperation with relevant leading manufacturers.
With deep technical accumulation in the field of devices as a core semiconductor technology, focusing on semiconductor device technology innovation, has a number of core patents for semiconductor devices. In the second half of 2013, the technical paper of Oriental Semiconductor Semiconductor′s original semi-floating gate device was published in the American journal Science, marking a major breakthrough for domestic scientists in the direction of semiconductor core technology, and the news broadcast, People′s Daily and other media have made headline key reports, which has attracted great attention from the industry at home and abroad. In 2016, the core chip for DC high-power charging pile for new energy vehicles independently developed by Oriental Semiconductor was successfully mass-produced, breaking the monopoly of foreign manufacturers. At present, Oriental Semiconductor has become a leader in the field of high-performance power semiconductors in China, and has taken a solid step in replacing imported semiconductor products in the field of new energy, and its products have entered a number of international first-line customers and have been well received by customers. So far, in EV charging field, 80% manufacture choose us. In terms of chips for photovoltaic inverters, Oriental Semiconductor chips have been steadily supplied for some very famous USA manufacturers. Advanced patented Trident-Gate Bipolar Transistor (TGBT™ ) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for MID to high range switching frequency converters.
Winture aim: To reduce the production cost with stable and cost-effective products
More environmentally friendly and less noise
Excellent stability and uniformity
Extremely low switching loss
Low RDS(ON) & FOM
Fast and soft antiparallel diode