Enhancement Mode N-Channel Power IGBT Transistor

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Remote Cut-Off Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: To247 OST20N135HRF
• Cooling Method: Naturally Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Structure: Diffusion
• Encapsulation Structure: Plastic Sealed Transistor
• Power Level: Medium Power
• Material: Silicon
• Application1: Induction Heating
• Application2: Soft Switching Applications
• Transport Package: Carton
• Specification: TO247
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1K/Month
• Package Size: 59.00cm * 34.00cm * 15.00cm
• Package Gross Weight: 18.000kg

Product Description

 

Product Description

General Description

OST20N135HRF  uses  advanced  Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to  provide extremely  low VCE(sat),  low gate charge, and excellent switching performance.This  device  is  suitable  for  resonant  induction heating applications.



Absolute Maximum Ratings at Tj =25ºC  unless otherwise noted   

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	1350	V
Gate emitter voltage	VGES	±20	V
Transient Gate emitter voltage, TP ≤10µs, D<0.01		±30	V
Continuous collector current1), TC =25 ºC	IC	40	A
Continuous collector current1), TC =100 ºC		20
Pulsed collector current2), TC =25 ºC	IC, pulse	60	A
Diode forward current1), TC =25 ºC	IF	40	A
Diode forward current1), TC =100 ºC		20
Diode pulsed current2), TC =25 ºC	IF, pulse	60	A
Power dissipation3), TC =25 ºC	PD	290	W
Power dissipation3), TC =100 ºC		145	W
Operation and storage temperature	Tstg  ,Tj	-55 to 150	ºC

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.43	.C/W
Diode thermal resistance, junction-case	RθJC	0.43	.C/W
Thermal resistance, junction-ambient4)	RθJA	40	.C/W

Electrical Characteristics at Tj =25 ºC  unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter breakdown voltage	V(BR)CES	1350			V	VGE=0 V, IC =0.5 mA
Collector-emitter saturation voltage	VCE(sat)		1.6	1.8	V	VGE =15 V, IC =20 A
			1.8	2.2	V	VGE =15 V, IC =25 A
			1.9		V	VGE =15 V, IC =20 A, Tj =150 ºC
Gate-emitter threshold voltage	VGE(th)	5.1	5.8	6.4	V	VCE =VGE, ID =0.5 mA
Diode forward voltage	VF		1.5	1.7	V	VGE =0 V, IF =20 A
			1.9			VGE =0 V, IF =20 A, Tj =150 ºC
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE =20 V
Zero gate voltage collector current	ICES			10	μA	VCE =1350 V, VGE =0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		3907		pF	VCE =25 V, VGE =0 V, ƒ=100 KHz
Output capacitance	Coes		51.3		pF
Reverse transfer capacitance	Cres		2.6		pF
Turn-on delay time	td(on)		48		ns	VCC=600 V, IC =20 A, VGE =15 V, RG =10 Ω
Turn-off delay time	td(off)		144		ns
Fall time	tf		235		ns
Turn-off energy	Eoff		1.0		mJ

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		71.5		nC	IC =20 A, VCC =1080 V, VGE=15 V
Gate-emitter charge	Qge		15.4		nC
Gate-collector charge	Qgc		32.8		nC

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)     Repetitive rating, pulse width limited by maximum junction temperature.
3)     Pd is based on maximum junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta =25 °C.



Ordering Information

Package	Units/Tube	Tubes/Inner Box	Units/Inner Box	Inner Box/Carton Box	Units/Carton Box
TO247	30	11	330	6	1980

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OST20N135HRF	TO247	yes	yes	yes

 

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