Perfect Replacement for The Gallium Nitride (GaN) Device Super Si Semiconductor

Product Description

Product Description

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.

Features                                                                                                  

• Low RDS(ON) & FOM
• Extremely low switching loss
• Excellent stability and uniformity
• Easy to design in

Applications

• PD charger
• Large screen display
• Telecom power
• Server power

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	36	A
RDS(ON), max @ VGS=10V	340	mΩ
Qg	9.6	nC

Marking Information

 

Product Name	Package	Marking
OSS65R340DF	TO252	OSS65R340D

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	12	A
Continuous drain current^1), TC=100 °C		7.6
Pulsed drain current^2), TC=25 °C	ID, pulse	36	A
Continuous diode forward current^1), TC=25 °C	IS	12	A
Diode pulsed current^2), TC=25 °C	IS, pulse	36	A
Power dissipation^3), TC=25 °C	PD	83	W
Single pulsed avalanche energy5)	EAS	200	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.5	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=250 μA
		700				VGS=0 V, ID=250 μA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.9		3.9	V	VDS=VGS, ID=250 μA
Drain-source on- state resistance	RDS(ON)		0.30	0.34	Ω	VGS=10 V, ID=6 A
			0.73			VGS=10 V, ID=6 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=650 V, VGS=0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		443.5		pF	VGS=0 V, VDS=50 V, ƒ=100 KHz
Output capacitance	Coss		59.6		pF
Reverse transfer capacitance	Crss		1.7		pF
Turn-on delay time	td(on)		22.4		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=6 A
Rise time	tr		17.5		ns
Turn-off delay time	td(off)		40.3		ns
Fall time	tf		7.2		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		9.6		nC	VGS=10 V, VDS=400 V, ID=6 A
Gate-source charge	Qgs		2.2		nC
Gate-drain charge	Qgd		4.5		nC
Gate plateau voltage	Vplateau		6.5		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=12 A, VGS=0 V
Reverse recovery time	trr		236.5		ns	VR=400 V, IS=6 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		2.2		μC
Peak reverse recovery current	Irrm		19.1		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.