Uninterruptible Power Supplies To247-P 800W Ost75n65hsmf 30V Manufacturer Trident Gate Bipolar Mosfet

• Application: Temperature Measurement
• Batch Number: 2010+
• Manufacturing Technology: Discrete Device
• Model NO.: OST75N65HSMF-2
• Material: Element Semiconductor
• Model: ST
• Package: DIP(Dual In-line Package)
• Signal Processing: Digital
• Type: N-Type Semiconductor
• P/N: Ost75n65hsmf
• Packing: to-274
• Applications1: Induction Converters
• Applications2: Uninterruptible Power Supplies
• Brand: Orientalsemi
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month
• Package Size: 59.00cm * 39.00cm * 16.00cm
• Package Gross Weight: 19.000kg

Product Description

Product Description

General Description
OST75N65HSMF   uses   advanced   Oriental-Semi's   patented   Trident-Gate   Bipolar   Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features
. Advanced TGBTTM technology
. Excellent conduction and switching loss
. Excellent stability and uniformity
. Fast and soft antiparallel diode

Applications
. Induction converters
. Uninterruptible power supplies

Key Performance Parameters
 

Parameter	Value	Unit
VCES, min @ 25°C	650	V
Maximum junction temperature	175	°C
IC, pulse	300	A
VCE(sat), typ @ VGE=15V	1.45	V
Qg	195	nC

Marking Information
 

Product Name	Package	Marking
OST75N65HSMF	TO247	OST75N65HSM

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10µs, D<0.01		±30	V
Continuous collector current1) , TC=25ºC	IC	90	A
Continuous collector current1) , TC=100ºC		75	A
Pulsed collector current2) , TC=25ºC	IC, pulse	300	A
Diode forward current1) , TC=25ºC	IF	90	A
Diode forward current1) , TC=100ºC		75	A
Diode pulsed current2) , TC=25ºC	IF, pulse	300	A
Power dissipation3) , TC=25ºC	PD	395	W
Power dissipation3) , TC=100ºC		198	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.38	°C/W
Diode thermal resistance, junction-case	RθJC	0.38	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

 

Electrical Characteristics at Tvj=25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter breakdown voltage	V(BR)CES	650			V	VGE=0 V, IC=0.5 mA
Collector-emitter   saturation voltage	VCE(sat)		1.45	1.7	V	VGE=15 V, IC=75 A Tvj=25°C
			1.65		V	VGE=15 V, IC=75 A, Tvj  =125°C
			1.75			VGE=15 V, IC=75 A, Tvj  =175°C
Gate-emitter threshold voltage	VGE(th)	3.0	4.0	5.0	V	VCE=VGE , ID=0.5 mA
Diode forward voltage	VF		1.6	1.8	V	VGE=0 V, IF=75 A Tvj  =25°C
			1.5			VGE=0 V, IF=75 A, Tvj  =125°C
			1.4			VGE=0 V, IF=75 A, Tvj  =175°C
Gate-emitter leakage current	IGES			100	nA	VCE=0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE=650 V, VGE=0 V

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		8066		pF	VGE=0 V, VCE=25 V, ƒ=100 kHz
Output capacitance	Coes		230		pF
Reverse transfer capacitance	Cres		6		pF
Turn-on delay time	td(on)		68		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=75 A
Rise time	tr		107		ns
Turn-off delay time	td(off)		265		ns
Fall time	tf		91		ns
Turn-on energy	Eon		2.98		mJ
Turn-off energy	Eoff		1.1		mJ
Turn-on delay time	td(on)		56		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=30 A
Rise time	tr		49		ns
Turn-off delay time	td(off)		311		ns
Fall time	tf		62		ns
Turn-on energy	Eon		0.95		mJ
Turn-off energy	Eoff		0.34		mJ

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		195		nC	VGE=15 V, VCC=520 V, IC=75 A
Gate-emitter charge	Qge		62		nC
Gate-collector charge	Qgc		54		nC

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		132		ns	VR =400 V, IF=75 A, diF/dt=500 A/μs Tvj  = 25°C
Diode reverse recovery charge	Qrr		1.4		μC
Diode peak reverse recovery current	Irrm		20		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.

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