Certification: | RoHS, ISO |
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Shape: | Metal Porcelain Tube |
Shielding Type: | Sharp Cutoff Shielding Tube |
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Parameter | Value | Unit |
VDS | 120 | V |
ID, pulse | 420 | A |
RDS(ON), max @ VGS =10V | 7 | mΩ |
Qg | 73.6 | nC |
Parameter | Symbol | Value | Unit |
Drain-source voltage | VDS | 120 | V |
Gate-source voltage | VGS | ±20 | V |
Continuous drain current1) , TC=25 °C | ID | 105 | A |
Pulsed drain current2) , TC=25 °C | ID, pulse | 420 | A |
Continuous diode forward current1) , TC=25 °C | IS | 105 | A |
Diode pulsed current2) , TC=25 °C | IS, pulse | 420 | A |
Power dissipation3), TC=25 °C | PD | 156 | W |
Single pulsed avalanche energy5) | EAS | 60 | mJ |
Operation and storage temperature | Tstg , Tj | -55 to 150 | °C |
Parameter |
Symbol |
Value |
Unit |
Thermal resistance, junction-case | RθJC | 0.8 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 120 | V | VGS =0 V, ID =250 μA | ||
Gate threshold voltage |
VGS(th) | 2.5 | 4.0 | V | VDS =VGS , ID =250 μA | |
Drain-source on-state resistance |
RDS(ON) | 5.5 | 7.0 | mΩ | VGS =10 V, ID=20 A | |
Gate-source leakage current |
IGSS |
100 | nA |
VGS =20 V | ||
- 100 | VGS =-20 V | |||||
Drain-source leakage current |
IDSS | 1 | μA | VDS =120 V, VGS =0 V | ||
Gate resistance | RG | 2.6 | Ω | ƒ=1 MHz, Open drain |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Ciss | 5305 | pF | VGS =0 V, VDS =25 V, ƒ=100 kHz |
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Output capacitance | Coss | 1547 | pF | |||
Reverse transfer capacitance | Crss | 170 | pF | |||
Turn-on delay time | td(on) | 33.2 | ns | VGS =10 V, VDS =60 V, RG=2 Ω, ID=30 A |
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Rise time | tr | 47 | ns | |||
Turn-off delay time | td(off) | 59.2 | ns | |||
Fall time | tf | 13 | ns |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | 73.6 | nC | VGS =10 V, VDS =60 V, ID=30 A |
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Gate-source charge | Qgs | 23.5 | nC | |||
Gate-drain charge | Qgd | 17.5 | nC | |||
Gate plateau voltage | Vplateau | 5.1 | V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode forward voltage | VSD | 1.3 | V | IS=20 A, VGS =0 V |
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Reverse recovery time | trr | 73.6 | ns | VR=80 V, IS=30 A, di/dt=100 A/μs |
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Reverse recovery charge | Qrr | 160 | nC | |||
Peak reverse recovery current | Irrm | 3.8 | A |
Package Type |
Units/ Reel |
Reels/ Inner Box | Units/ Inner Box | Inner Box/ Carton Box | Units/ Carton Box |
PDFN5 x 6-P | 5000 | 2 | 10000 | 5 | 50000 |
Product | Package | Pb Free | RoHS | Halogen Free |
SFS12R08GNF | PDFN5 x 6 | yes | yes | yes |