Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: PDFN5*6 SFS12R08GNF
• Structure: Diffusion
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
FSMOS®   MOSFET  is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in power supply systems with driving voltage of more than 10V .

Features
      Low RDS(on) & FOM (Figure of Merit)
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery

Applications
      Switching mode power supply
      Motor driver
      Battery protection
      DC-DC convertor
      Solar inverter
      UPS and energy inverter

Key Performance Parameters

Parameter	Value	Unit
VDS	120	V
ID, pulse	420	A
RDS(ON), max @ VGS =10V	7	mΩ
Qg	73.6	nC

 

Absolute Maximum Ratings at Tj =25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	120	V
Gate-source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	105	A
Pulsed drain current2) , TC=25 °C	ID, pulse	420	A
Continuous diode forward current1) , TC=25 °C	IS	105	A
Diode pulsed current2) , TC=25 °C	IS, pulse	420	A
Power dissipation3), TC=25 °C	PD	156	W
Single pulsed avalanche energy5)	EAS	60	mJ
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.8	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	120			V	VGS =0 V, ID =250 μA
Gate threshold voltage	VGS(th)	2.5		4.0	V	VDS =VGS , ID =250 μA
Drain-source on-state resistance	RDS(ON)		5.5	7.0	mΩ	VGS =10 V, ID=20 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	μA	VDS =120 V, VGS =0 V
Gate resistance	RG		2.6		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		5305		pF	VGS =0 V, VDS =25 V, ƒ=100 kHz
Output capacitance	Coss		1547		pF
Reverse transfer capacitance	Crss		170		pF
Turn-on delay time	td(on)		33.2		ns	VGS =10 V, VDS =60 V, RG=2 Ω, ID=30 A
Rise time	tr		47		ns
Turn-off delay time	td(off)		59.2		ns
Fall time	tf		13		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		73.6		nC	VGS =10 V, VDS =60 V, ID=30 A
Gate-source charge	Qgs		23.5		nC
Gate-drain charge	Qgd		17.5		nC
Gate plateau voltage	Vplateau		5.1		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS =0 V
Reverse recovery time	trr		73.6		ns	VR=80 V, IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		160		nC
Peak reverse recovery current	Irrm		3.8		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.


Ordering Information
 

Package Type	Units/ Reel	Reels/   Inner Box	Units/   Inner Box	Inner Box/ Carton Box	Units/     Carton Box
PDFN5 x 6-P	5000	2	10000	5	50000

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
SFS12R08GNF	PDFN5 x 6	yes	yes	yes

Supply Chain

Green Product Declaration