Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet

Product Details
Certification: RoHS, ISO
Shape: Metal Porcelain Tube
Shielding Type: Sharp Cutoff Shielding Tube
Manufacturer/Factory, Trading Company
Gold Member Since 2022

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Registered Capital
10000000 RMB
Plant Area
501~1000 square meters
  • Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet
  • Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet
  • Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet
  • Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet
  • Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet
  • Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet
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Basic Info.

Model NO.
PDFN5*6 SFS12R08GNF
Cooling Method
Air Cooled Tube
Function
Switch Transistor
Working Frequency
High Frequency
Structure
Diffusion
Encapsulation Structure
Chip Transistor
Power Level
High Power
Material
Silicon
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month

Product Description

General Description
FSMOS®   MOSFET  is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in power supply systems with driving voltage of more than 10V .

Features
      Low RDS(on) & FOM (Figure of Merit)
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery

Applications
      Switching mode power supply
      Motor driver
      Battery protection
      DC-DC convertor
      Solar inverter
      UPS and energy inverter

Key Performance Parameters

Parameter Value Unit
VDS 120 V
ID, pulse 420 A
RDS(ON), max @ VGS =10V 7 mΩ
Qg 73.6 nC
 

Absolute Maximum Ratings at Tj =25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage VDS 120 V
Gate-source voltage VGS ±20 V
Continuous drain current1) , TC=25 °C ID 105 A
Pulsed drain current2) , TC=25 °C ID, pulse 420 A
Continuous diode forward current1) , TC=25 °C IS 105 A
Diode pulsed current2) , TC=25 °C IS, pulse 420 A
Power dissipation3), TC=25 °C PD 156 W
Single pulsed avalanche energy5) EAS 60 mJ
Operation and storage temperature Tstg , Tj -55 to 150 °C


Thermal Characteristics
 

Parameter

Symbol

Value

Unit
Thermal resistance, junction-case RθJC 0.8 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W


Electrical Characteristics at Tj =25°C unless otherwise specified
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source          breakdown voltage BVDSS 120     V VGS =0 V, ID =250 μA
Gate threshold
voltage
VGS(th) 2.5   4.0 V VDS =VGS , ID =250 μA
Drain-source
on-state resistance
RDS(ON)   5.5 7.0 mΩ VGS =10 V, ID=20 A
Gate-source
leakage current

IGSS
    100
nA
VGS =20 V
    - 100 VGS =-20 V
Drain-source
leakage current
IDSS     1 μA VDS =120 V, VGS =0 V
Gate resistance RG   2.6   Ω ƒ=1 MHz, Open drain


Dynamic Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   5305   pF
VGS =0 V,
VDS =25 V,
ƒ=100 kHz
Output capacitance Coss   1547   pF
Reverse transfer capacitance Crss   170   pF
Turn-on delay time td(on)   33.2   ns
VGS =10 V,
VDS =60 V,
RG=2 Ω,
ID=30 A
Rise time tr   47   ns
Turn-off delay time td(off)   59.2   ns
Fall time tf   13   ns


Gate Charge Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   73.6   nC
VGS =10 V,
VDS =60 V,
ID=30 A
Gate-source charge Qgs   23.5   nC
Gate-drain charge Qgd   17.5   nC
Gate plateau voltage Vplateau   5.1   V


Body Diode Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.3 V IS=20 A,
VGS =0 V
Reverse recovery time trr   73.6   ns
VR=80 V,
IS=30 A,
di/dt=100 As
Reverse recovery charge Qrr   160   nC
Peak reverse recovery current Irrm   3.8   A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.


Ordering Information
 
Package
Type
Units/
Reel
Reels/   Inner Box Units/   Inner Box Inner Box/ Carton Box Units/     Carton Box
PDFN5 x 6-P 5000 2 10000 5 50000


Product Information
 
Product Package Pb Free RoHS Halogen Free
SFS12R08GNF PDFN5 x 6 yes yes yes


Supply ChainPdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet



Green Product Declaration

Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet
Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power MosfetPdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet
Pdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power MosfetPdfn5*6 Sfs12r08gnf Vds-120V ID-420A RDS (ON) -7milliohm Qg-73.6nc for Battery Protection Solar Inverter N-Channel Power Mosfet

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