PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT

US$0.10-0.60 1,000 Pieces (MOQ)
Product Details
Certification: RoHS, ISO
Encapsulation Structure: Plastic Sealed Transistor
Installation: Plug-in Triode
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PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT pictures & photos
PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT pictures & photos
PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT pictures & photos
PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT pictures & photos
PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT pictures & photos
PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT pictures & photos
  • PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
  • PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
  • PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
  • PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
  • PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
  • PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
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Product Description

Company Info.
Overview

Basic Info.

Model NO.
OST40N120HMF TO-247N
Working Frequency
High Frequency
Power Level
Medium Power
Function
Power Triode, Switching Triode
Structure
NPN
Material
Silicon
Application 2
Induction Converters
Application 3
Induction Converters
Weight
0.0076g
Transport Package
Carton
Specification
35.3x30x37.5/60x23x13
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month

Packaging & Delivery

Package Size
59.00cm * 34.00cm * 16.00cm
Package Gross Weight
18.000kg

Product Description

Product Description

General Description

OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features
  • Advanced TGBTTM technology
  • Excellent conduction and switching loss
  • Excellent stability and uniformity
  • Fast and soft antiparallel diode

Applications
  • Induction converters
  • Uninterruptible power supplies


Key Performance Parameters

 
Parameter Value Unit
VCES, min @ 25°C 1200 V
Maximum junction temperature 175 °C
IC, pulse 160 A
VCE(sat), typ @ VGE=15V 1.45 V
Qg 214 nC

Marking Information

 
Product Name Package Marking
OST40N120HMF TO247 OST40N120HM

 
Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
 
Parameter Symbol Value Unit
Collector emitter voltage VCES 1200 V
Gate emitter voltage
VGES		 ±20 V
Transient gate emitter voltage, TP≤0.5µs, D<0.001 ±25 V
Continuous collector current1), TC=25ºC
IC		 56 A
Continuous collector current1), TC=100ºC 40 A
Pulsed collector current2), TC=25ºC IC, pulse 160 A
Diode forward current1), TC=25ºC
IF		 56 A
Diode forward current1), TC=100ºC 40 A
Diode pulsed current2), TC=25ºC IF, pulse 160 A
Power dissipation3), TC=25ºC
PD		 357 W
Power dissipation3), TC=100ºC 179 W
Operation and storage temperature Tstg, Tvj -55 to 175 °C
Short circuit withstand time VGE=15 V, VCC≤600 V
Allowed number of short circuits<1000 Time between short circuits:≥1.0 S
Tvj=150 °C

tSC

10

μs

Thermal Characteristics
Parameter Symbol Value Unit
IGBT thermal resistance, junction-case RθJC 0.42 °C/W
Diode thermal resistance, junction-case RθJC 0.75 °C/W
Thermal resistance, junction-ambient4) RθJA 40 °C/W
 

Electrical Characteristics at Tvj=25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Collector-emitter breakdown voltage V(BR)CES 1200     V VGE=0 V, IC=0.5 mA


Collector-emitter saturation voltage


VCE(sat)		   1.45 1.8 V VGE=15 V, IC=40 A Tvj=25°C
  1.65   V VGE=15 V, IC=40 A, Tvj =125°C
  1.8     VGE=15 V, IC=40 A, Tvj =175°C
Gate-emitter
threshold voltage		 VGE(th) 4.8 5.8 6.8 V VCE=VGE, ID=0.5 mA


Diode forward voltage


VF		   1.9 2.1 V VGE=0 V, IF=40 A Tvj =25°C
  1.6     VGE=0 V, IF=40 A, Tvj =125°C
  1.5     VGE=0 V, IF=40 A, Tvj =175°C
Gate-emitter
leakage current		 IGES     100 nA VCE=0 V, VGE=20 V
Zero gate voltage collector current ICES     10 μA VCE=1200V, VGE=0 V
 

Dynamic Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Cies   11270   pF
VGE=0 V, VCE=25 V,
ƒ=100 kHz
Output capacitance Coes   242   pF
Reverse transfer capacitance Cres   10   pF
Turn-on delay time td(on)   120   ns


VGE=15 V, VCC=600 V, RG=10 Ω, IC=40 A
Rise time tr   88   ns
Turn-off delay time td(off)   246   ns
Fall time tf   160   ns
Turn-on energy Eon   3.14   mJ
Turn-off energy Eoff   1.02   mJ
Turn-on delay time td(on)   112   ns


VGE=15 V, VCC=600 V, RG=10 Ω, IC=20 A
Rise time tr   51   ns
Turn-off delay time td(off)   284   ns
Fall time tf   148   ns
Turn-on energy Eon   1.32   mJ
Turn-off energy Eoff   0.53   mJ

Gate Charge Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   214   nC
VGE=15 V, VCC=960 V, IC=40 A
Gate-emitter charge Qge   103   nC
Gate-collector charge Qgc   40   nC

Body Diode Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode reverse recovery time trr   293   ns VR=600 V, IF=40 A,
diF/dt=500 A/μs Tvj = 25°C
Diode reverse recovery charge Qrr   2.7   μC
Diode peak reverse recovery current Irrm   25   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
 
Version 1: TO247-P package outline dimension


Ordering Information
 
Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box
TO247-P 30 11 330 6 1980

Product Information
 
Product Package Pb Free RoHS Halogen Free
OST40N120HMF TO247 yes yes yes


Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

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PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBTPTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT
PTC Heater 1200V 40A Frd Built-in to-247n Field Stop Trench IGBT

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