PC Power LED Lighting Telecom Power To220 Osg60r180PF Vds-650V ID-60A RDS (ON) -180milliohm Qg-23.3nc Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Remote Cut-Off Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO220 OSG60R180PF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
 

Features

• Low RDS(ON) & FOM
• Extremely low switching loss
• Excellent stability and uniformity

 

Applications

• PC power
• LED lighting
• Telecom power
• Server power
• EV Charger
• Solar/UPS

 

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	650	V
ID, pulse	60	A
RDS(ON) , max @ VGS=10V	180	mΩ
Qg	23.3	nC

Marking Information

 

Product Name	Package	Marking
OSG60R180PF	TO220	OSG60R180P

 

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	600	V
Gate-source voltage	VGS	±30	V
Continuous drain current1), TC=25 °C	ID	20	A
Continuous drain current1), TC=100 °C		12.5
Pulsed drain current2), TC=25 °C	ID, pulse	60	A
Continuous diode forward current1), TC=25 °C	IS	20	A
Diode pulsed current2), TC=25 °C	IS, pulse	60	A
Power dissipation3), TC=25 °C	PD	151	W
Single pulsed avalanche energy5)	EAS	600	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

 

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.82	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	600			V	VGS=0 V, ID=250 uA
		650				VGS=0 V, ID=250 uA, Tj=150 °C
Gate threshold voltage	VGS(th)	2		4	V	VDS=VGS, ID=250 uA
Drain-source on- state resistance	RDS(ON)		0.15	0.18	Ω	VGS=10 V, ID=10 A
			0.38			VGS=10 V, ID=10 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=600 V, VGS=0 V

 

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		1440		pF	VGS=0 V, VDS=50 V, ƒ=1 MHz
Output capacitance	Coss		105		pF
Reverse transfer capacitance	Crss		3.94		pF
Turn-on delay time	td(on)		40.3		ns	VGS=10 V, VDS=480 V, RG=25 Ω, ID=20 A
Rise time	tr		49.3		ns
Turn-off delay time	td(off)		60		ns
Fall time	tf		59.2		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		23.3		nC	VGS=10 V, VDS=480 V, ID=20 A
Gate-source charge	Qgs		6.6		nC
Gate-drain charge	Qgd		8.3		nC
Gate plateau voltage	Vplateau		5.6		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.4	V	IS=20 A, VGS=0 V
Reverse recovery time	trr		367.2		ns	VR=400 V, IS=20 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		4.2		μC
Peak reverse recovery current	Irrm		24.3		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=150 V, VGS=10 V, L=10.8 mH, starting Tj=25 °C.

Ordering Information

 

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO220-P	50	20	1000	6	6000

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
OSG60R180PF	TO220	yes	yes	yes

 

Supply Chain

Green Product Declaration