To247 Ost50n65hf Vces-650V Maximum Junction Temperature175, Pulse-200A Vce (sat) -1.4V Qg-99nc N-Channel Power IGBT

• Certification: RoHS, CE, ISO, CCC
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO247 OST50N65HF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description

OST50N65HF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM)

technology to provide extremely low VCE(sat), low gate charge, and excellent switching

performance. This device is suitable for mid to high range switching frequency converters.

 

Features

Advanced TGBTTM technology

Excellent conduction and switching loss

Excellent stability and uniformity


Applications
Induction converters
Uninterruptible power supplies 


Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25 °C	650	V
Maximum junction temperature	175	°C
IC, pulse	150	A
VCE(sat), typ @ VGE=15 V	1.6	V
Qg	102	nC

Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10 µs, D<0.01		±30	V
Continuous collector current1) , TC=25 °C	IC	80	A
Continuous collector current1) , TC=100 °C		50	A
Pulsed collector current2) , TC=25 °C	IC, pulse	150	A
Power dissipation3) , TC=25 °C	PD	270	W
Power dissipation3) , TC=100 °C		135	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C
Short circuit withstand time VGE =15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj =150 °C	SC	10	μs

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.55	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter    breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter  saturation voltage	VCE(sat)		1.6	2.0	V	VGE =15 V, IC=50 A Tvj=25 °C
			1.8		V	VGE =15 V, IC=50 A, Tvj=125 °C
			1.9			VGE =15 V, IC=50 A, Tvj=175 °C
Gate-emitter        threshold voltage	VGE(th)	3.0	4.2	5.5	V	VCE =VGE , ID =0.5 mA
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE =650 V, VGE =0 V

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.



Ordering Information

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO247-J	30	20	600	5	3000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OST50N65HF	TO247	yes	yes	yes

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