• Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet
  • Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet
  • Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet
  • Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet
  • Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet
  • Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet

Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet

Certification: RoHS, ISO
Shape: Subminiature
Shielding Type: Sharp Cutoff Shielding Tube
Cooling Method: Air Cooled Tube
Function: Switch Transistor
Working Frequency: High Frequency
Gold Member Since 2022

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Manufacturer/Factory, Trading Company

Basic Info.

Model NO.
TOLL OSS60R099TF
Structure
Planar
Encapsulation Structure
Chip Transistor
Power Level
High Power
Material
Silicon
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS®  SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits .


Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity


Applications
      PC power
      LED lighting
      Telecom power
      Server power
      EV Charger
      Solar/UPS



Key Performance Parameters

Parameter Value Unit
VDS, min @ Tj(max) 650 V
ID, pulse 90 A
RDS(ON) , max @ VGS =10V 99 mΩ
Qg 21.6 nC


Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter Symbol Value Unit
Drain-source voltage VDS 600 V
Gate-source voltage VGS ±30 V
Continuous drain current1) , TC=25 °C
ID
30
A
Continuous drain current1) , TC=100 °C 19
Pulsed drain current2) , TC=25 °C ID, pulse 90 A
Continuous diode forward current1) , TC=25 °C IS 30 A
Diode pulsed current2) , TC=25 °C IS, pulse 90 A
Power dissipation3), TC=25 °C PD 219 W
Single pulsed avalanche energy5) EAS 577.6 mJ
MOSFET dv/dt ruggedness, VDS =0…480 V dv/dt 50 V/ns
Reverse diode dv/dt, VDS =0…480 V, ISDID dv/dt 15 V/ns
Operation and storage temperature Tstg , Tj -55 to 150 °C



Thermal Characteristics

Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 0.57 °C/W
Thermal resistance, junction-ambient4) RθJA 62.5 °C/W



Electrical Characteristics at Tj =25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source          breakdown voltage
BVDSS
600    
V
VGS =0 V, ID =250 μA
650 740   VGS =0 V, ID =250 μA, Tj =150 °C
Gate threshold
voltage
VGS(th) 2.9   3.9 V VDS =VGS , ID =250 μA
Drain-source on- state resistance
RDS(ON)
  0.080 0.099
Ω
VGS =10 V, ID=15 A
  0.192   VGS =10 V, ID=15 A,
Tj =150 °C
Gate-source
leakage current

IGSS
    100
nA
VGS =30 V
    - 100 VGS =-30 V
Drain-source
leakage current
IDSS     1 μA VDS =600 V, VGS =0 V


Gate Charge Characteristic

Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   21.6   nC
VGS =10 V,
VDS =400 V,
ID=20 A
Gate-source charge Qgs   6.9   nC
Gate-drain charge Qgd   7.8   nC
Gate plateau voltage Vplateau   6.5   V

Body Diode Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.4 V IS=30 A,
VGS =0 V
Reverse recovery time trr   416.0   ns VR =400V,
IS=20 A,
di/dt=100 As
Reverse recovery charge Qrr   6.8   μC
Peak reverse recovery current Irrm   32.1   A


Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=60 mH, starting Tj =25 °C.


Ordering Information

Package
Type
Units/
Reel
Reels/   Inner Box Units/   Inner Box Inner Boxes/ Carton Box Units/     Carton Box
TOLL-S 2000 1 2000 7 14000



Product Information
Product Package Pb Free RoHS Halogen Free
OSS60R099TF TOLL yes yes yes


Supply Chain

Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet



Green Product Declaration

Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet
Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power MosfetToll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet
Toll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power MosfetToll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power MosfetToll Oss60r099TF Vds-650V ID-90A RDS (ON) -99ohm Qg-21.6ncn-Channel Power Mosfet

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