EV Charger To252 Package N-Channel 800W 900V Power Mosfet

• Application: Temperature Measurement
• Batch Number: 2010+
• Manufacturing Technology: Discrete Device
• Material: Element Semiconductor
• Model: PC817
• Package: DIP(Dual In-line Package)
• Model NO.: OSG80R900DF
• Signal Processing: Simulation
• Type: N-Type Semiconductor
• Brand: Orientalsemi
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The  Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      LED lighting
     Telecom Power
      Solar/UPS
      Sever power
      PC power
      EV Charger
 

Supply Chain

Green Product Declaration