Certification: | RoHS, ISO |
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Shape: | Metal Porcelain Tube |
Shielding Type: | Sharp Cutoff Shielding Tube |
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SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage.
Parameter | Value | Unit |
VDS, min @ Tj(max) | 100 | V |
ID, pulse | 45 | A |
RDS(ON) max @ VGS=10V | 75 | mΩ |
Qg | 6.5 | nC |
Product Name | Package | Marking |
SFG15N10DF | TO252 | SFG15N10D |
Parameter | Symbol | Value | Unit |
Drain source voltage | VDS | 100 | V |
Gate source voltage | VGS | ±20 | V |
Continuous drain current1) , TC=25 °C | ID | 15 | A |
Pulsed drain current2) , TC=25 °C | ID, pulse | 45 | A |
Continuous diode forward current1) , TC=25 °C | IS | 15 | A |
Diode pulsed current2) , TC=25 °C | IS, Pulse | 45 | A |
Power dissipation3) , TC=25 °C | PD | 36 | W |
Single pulsed avalanche energy5) | EAS | 5.5 | mJ |
Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Parameter | Symbol | Value | Unit |
Thermal resistance, junction-case | RθJC | 3.5 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage |
BVDSS | 100 | V | VGS=0 V, ID=250 μA | ||
Gate threshold voltage |
VGS(th) | 1.2 | 2.5 | V | VDS=VGS, ID=250 μA | |
Drain-source on-state resistance |
RDS(ON) | 50 | 75 | mΩ | VGS=10 V, ID=5 A | |
Drain-source on-state resistance |
RDS(ON) | 60 | 90 | mΩ | VGS=4.5 V, ID=3 A | |
Gate-source leakage current |
IGSS |
100 | nA |
VGS=20 V | ||
-100 | VGS=-20 V | |||||
Drain-source leakage current |
IDSS | 1 | μA | VDS=100 V, VGS=0 V | ||
Gate Resistance | Rg | 28.8 | Ω | ƒ=1 MHz, Open drain |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Ciss | 310 | pF | VGS=0 V, VDS=25 V, ƒ=100 kHz |
||
Output capacitance | Coss | 171 | pF | |||
Reverse transfer capacitance | Crss | 16.7 | pF | |||
Turn-on delay time | td(on) | 14 | ns | VGS=10 V, VDS=50 V, RG=2 Ω, ID=5 A |
||
Rise time | tr | 3.2 | ns | |||
Turn-off delay time | td(off) | 36 | ns | |||
Fall time | tf | 14 | ns |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | 6.5 | nC | VGS=10 V, VDS=50 V, ID=5 A |
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Gate-source charge | Qgs | 1.4 | nC | |||
Gate-drain charge | Qgd | 1.4 | nC | |||
Gate plateau voltage | Vplateau | 3.3 | V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode forward voltage | VSD | 1.3 | V | IS=7 A, VGS=0 V |
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Reverse recovery time | trr | 36 | ns | VR=50 V, IS=5 A, di/dt=100 A/μs |
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Reverse recovery charge | Qrr | 37 | nC | |||
Peak reverse recovery current | Irrm | 1.7 | A |