DC-D Cconvertor To252 Sfg10r75df Vds-100V ID-45A Mode N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO252 SFG10R75DF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth  series is specially designed to use in synchronous rectification power systems with low driving voltage.
 

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery


Applications
      PD charger
      Motor driver
      Switching voltage regulator
      DC-DC convertor
      Switched mode power supply


Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	100	V
ID, pulse	45	A
RDS(ON) max @ VGS =10V	75	mΩ
Qg	6.5	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	100	V
Gate source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	15	A
Pulsed drain current2) , TC=25 °C	ID, pulse	45	A
Continuous diode forward current1) , TC=25 °C	IS	15	A
Diode pulsed current2) , TC=25 °C	IS, Pulse	45	A
Power dissipation3) , TC=25 °C	PD	36	W
Single pulsed avalanche energy5)	EAS	5.5	mJ
Operation and storage temperature	Tstg ,Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	3.5	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	100			V	VGS =0 V, ID =250 pA
Gate threshold voltage	VGS(th)	1.2		2.5	V	VDS =VGS , ID =250 pA
Drain-source on-state resistance	RDS(ON)		50	75	mQ	VGS =10 V, ID=5 A
Drain-source on-state resistance	RDS(ON)		60	90	mQ	VGS =4.5 V, ID=3 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	pA	VDS =100 V, VGS =0 V
Gate Resistance	Rg		28.8		Q	f=1 MHz, Open drain

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		6.5		nC	VGS =10 V, VDS =50 V, ID=5 A
Gate-source charge	Qgs		1.4		nC
Gate-drain charge	Qgd		1.4		nC
Gate plateau voltage	Vplateau		3.3		V

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.


Ordering Information

Package Type	Units/ Reel	Reels /   Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO252-P	2500	2	5000	5	25000
TO252-J	2500	2	5000	5	25000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
SFG10R75DF	TO252	yes	yes	yes

Supply Chain

Green Product Declaration