Certification: | RoHS, ISO |
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Shape: | Metal Porcelain Tube |
Shielding Type: | Remote Cut-Off Shielding Tube |
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Parameter | Value | Unit |
VCES, min @ 25°C | 1200 | V |
Maximum junction temperature | 175 | °C |
IC, pulse | 160 | A |
VCE(sat), typ @ VGE=15V | 1.45 | V |
Qg | 214 | nC |
Parameter | Symbol | Value | Unit |
Collector emitter voltage | VCES | 1200 | V |
Gate emitter voltage | VGES |
±20 | V |
Transient gate emitter voltage, TP≤0.5µs, D<0.001 | ±25 | V | |
Continuous collector current1) , TC=25ºC | IC |
56 | A |
Continuous collector current1) , TC=100ºC | 40 | A | |
Pulsed collector current2) , TC=25ºC | IC, pulse | 160 | A |
Diode forward current1) , TC=25ºC | IF |
56 | A |
Diode forward current1) , TC=100ºC | 40 | A | |
Diode pulsed current2) , TC=25ºC | IF, pulse | 160 | A |
Power dissipation3) , TC=25ºC | PD |
357 | W |
Power dissipation3) , TC=100ºC | 179 | W | |
Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
Short circuit withstand time VGE =15 V, VCC≤600 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj =150 °C |
SC |
10 |
μs |
Parameter | Symbol | Value | Unit |
IGBT thermal resistance, junction-case | RθJC | 0.42 | °C/W |
Diode thermal resistance, junction-case | RθJC | 0.75 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Collector-emitter breakdown voltage | V(BR)CES | 1200 | V | VGE =0 V, IC =0.5 mA | ||
Collector-emitter saturation voltage |
VCE(sat) |
1.45 | 1.8 | V | VGE =15 V, IC=40 A Tvj=25°C |
|
1.65 | V | VGE =15 V, IC=40 A, Tvj =125°C |
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1.8 | VGE =15 V, IC=40 A, Tvj =175°C |
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Gate-emitter threshold voltage | VGE(th) | 4.8 | 5.8 | 6.8 | V | VCE =VGE , ID =0.5 mA |
Diode forward voltage |
VF |
1.9 | 2.1 | V | VGE =0 V, IF =40 A Tvj =25°C |
|
1.6 | VGE =0 V, IF =40 A, Tvj =125°C |
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1.5 | VGE =0 V, IF =40 A, Tvj =175°C |
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Gate-emitter leakage current |
IGES | 100 | nA | VCE =0 V, VGE=20 V | ||
Zero gate voltage collector current | ICES | 10 | μA | VCE =1200V, VGE=0 V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | 214 | nC | VGE =15 V, VCC=960 V, IC=40 A |
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Gate-emitter charge | Qge | 103 | nC | |||
Gate-collector charge | Qgc | 40 | nC |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode reverse recovery time | trr | 293 | ns | VR =600 V, IF=40 A, diF/dt=500 A/μs Tvj = 25°C |
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Diode reverse recovery charge | Qrr | 2.7 | μC | |||
Diode peak reverse recovery current | Irrm | 25 | A |
Package Type |
Units/ Tube |
Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
TO247-P | 30 | 1 1 | 330 | 6 | 1980 |
Product | Package | Pb Free | RoHS | Halogen Free |
OST40N120HMF | TO247 | yes | yes | yes |