• To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT
  • To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT
  • To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT
  • To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT
  • To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT
  • To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT

To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT

Certification: RoHS, ISO
Shape: Metal Porcelain Tube
Shielding Type: Remote Cut-Off Shielding Tube
Cooling Method: Air Cooled Tube
Function: Microwave Transistor, Switch Transistor
Working Frequency: High Frequency
Gold Member Since 2022

Suppliers with verified business licenses

Manufacturer/Factory, Trading Company

Basic Info.

Model NO.
To247 OST40N120HMF
Structure
Planar
Encapsulation Structure
Chip Transistor
Power Level
High Power
Material
Silicon
Transport Package
Carton
Specification
35x37x30cm
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month

Product Description


General Description
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.


Features
      Advanced TGBTTM technology
      Excellent conduction and switching loss
      Excellent stability and uniformity
      Fast and soft antiparallel diode


Applications
      Induction converters
      Uninterruptible power supplies



Key Performance Parameters
Parameter Value Unit
VCES, min @ 25°C 1200 V
Maximum junction temperature 175 °C
IC, pulse 160 A
VCE(sat), typ @ VGE=15V 1.45 V
Qg 214 nC



Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
Parameter Symbol Value Unit
Collector emitter voltage VCES 1200 V
Gate emitter voltage
VGES
±20 V
Transient gate emitter voltage, TP≤0.5µs, D<0.001 ±25 V
Continuous collector current1) , TC=25ºC
IC
56 A
Continuous collector current1) , TC=100ºC 40 A
Pulsed collector current2) , TC=25ºC IC, pulse 160 A
Diode forward current1) , TC=25ºC
IF
56 A
Diode forward current1) , TC=100ºC 40 A
Diode pulsed current2) , TC=25ºC IF, pulse 160 A
Power dissipation3) , TC=25ºC
PD
357 W
Power dissipation3) , TC=100ºC 179 W
Operation and storage temperature Tstg, Tvj -55 to 175 °C
Short circuit withstand time
VGE =15 V, VCC≤600 V
Allowed number of short circuits<1000
Time between short circuits:1.0 S
Tvj =150 °C


SC


10


μs



Thermal Characteristics
Parameter Symbol Value Unit
IGBT thermal resistance, junction-case RθJC 0.42 °C/W
Diode thermal resistance, junction-case RθJC 0.75 °C/W
Thermal resistance, junction-ambient4) RθJA 40 °C/W



Electrical Characteristics at Tvj =25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Collector-emitter    breakdown voltage V(BR)CES 1200     V VGE =0 V, IC =0.5 mA


Collector-emitter  saturation voltage


VCE(sat)
  1.45 1.8 V VGE =15 V, IC=40 A
Tvj=25°C
  1.65   V VGE =15 V, IC=40 A,
Tvj  =125°C
  1.8     VGE =15 V, IC=40 A,
Tvj  =175°C
Gate-emitter        threshold voltage VGE(th) 4.8 5.8 6.8 V VCE =VGE , ID =0.5 mA


Diode forward
voltage


VF
  1.9 2.1 V VGE =0 V, IF =40 A
Tvj  =25°C
  1.6     VGE =0 V, IF =40 A,
Tvj  =125°C
  1.5     VGE =0 V, IF =40 A,
Tvj  =175°C
Gate-emitter
leakage current
IGES     100 nA VCE =0 V, VGE=20 V
Zero gate voltage collector current ICES     10 μA VCE =1200V, VGE=0 V



Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   214   nC
VGE =15 V,
VCC=960 V,
IC=40 A
Gate-emitter charge Qge   103   nC
Gate-collector charge Qgc   40   nC



Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode reverse recovery time trr   293   ns VR =600 V,
IF=40 A,
diF/dt=500 As Tvj  = 25°C
Diode reverse recovery charge Qrr   2.7   μC
Diode peak reverse recovery current Irrm   25   A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.



Ordering Information
Package
Type
Units/
Tube
Tubes/  Inner Box Units/   Inner Box Inner Boxes/ Carton Box Units/     Carton Box
TO247-P 30 1 1 330 6 1980



Product Information
Product Package Pb Free RoHS Halogen Free
OST40N120HMF TO247 yes yes yes



 
Supply Chian

To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT


Green Product Declaration

To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT
To247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBTTo247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBTTo247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBTTo247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBTTo247 Ost40n120hmf Vces-1200V Maximum Junction Temperature175 N-Channel Power IGBT

Send your message to this supplier

*From:
*To:
*Message:

Enter between 20 to 4,000 characters.

This is not what you are looking for? Post a Sourcing Request Now