To247 Osg60r074hszf Vds-650V ID-141A RDS (ON) -74milliohm Qg-66.8nc for Motor Driver EV Charger N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Model NO.: TO247 OSG60R074HSZF
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35cm x 37cm x 30cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity
      Ultra-fast and robust body diode

Applications
      PC power
      Telecom power
      Server power
      EV Charger
      Motor driver

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	650	V
ID, pulse	141	A
RDS(ON), max @ VGS =10V	74	mΩ
Qg	66.8	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	600	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	47	A
Continuous drain current1) , TC=100 °C		30
Pulsed drain current2) , TC=25 °C	ID, pulse	141	A
Continuous diode forward current1) , TC=25 °C	IS	47	A
Diode pulsed current2) , TC=25 °C	IS, pulse	141	A
Power dissipation3) , TC=25 °C	PD	278	W
Single pulsed avalanche energy5)	EAS	1000	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.45	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	600			V	VGS =0 V, ID =1 mA
		650				VGS =0 V, ID =1 mA, Tj =150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS =VGS , ID =1 mA
Drain-source on- state resistance	RDS(ON)		0.066	0.074	Ω	VGS =10 V, ID=23.5 A
			0.16			VGS =10 V, ID=23.5 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			10	μA	VDS =600 V, VGS =0 V
Gate resistance	RG		8		Ω	ƒ=1 MHz ,Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		3982		pF	VGS =0 V, VDS =50 V, ƒ=100 KHz
Output capacitance	Coss		354		pF
Reverse transfer capacitance	Crss		9.3		pF
Turn-on delay time	td(on)		48.3		ns	VGS =10 V, VDS =400 V, RG=2 Ω, ID=25 A
Rise time	tr		88		ns
Turn-off delay time	td(off)		89.3		ns
Fall time	tf		7.2		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		66.8		nC	VGS =10 V, VDS =400 V, ID=25 A
Gate-source charge	Qgs		24.4		nC
Gate-drain charge	Qgd		23.5		nC
Gate plateau voltage	Vplateau		7.0		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.4	V	IS=47 A, VGS =0 V
Reverse recovery time	trr		158.3		ns	IS=25 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.1		uC
Peak reverse recovery current	Irrm		12.5		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=60 mH, starting Tj =25 °C.


Ordering Information

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO247-C	30	11	330	6	1980
TO247-J	30	20	600	5	3000

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
OSG60R074HSZF	TO247	yes	yes	yes

Supply Chain

Green Product Declaration