To247-4L Ost60n65h4ewf Vces-650V Maximum Junction Temperature175 Power IGBT

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Remote Cut-Off Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: OST60N65H4EWF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
OST60N65H4EWF  uses  advanced  Oriental-Semi's  patented  Trident-Gate  Bipolar  Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.



Features
      Advanced TGBTTM technology
      Excellent conduction and switching loss
      Excellent stability and uniformity
      Fast and soft antiparallel SiC diode




Applications
      Induction converters
      Uninterruptible power supplies




Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25 °C	650	V
Maximum junction temperature	175	°C
IC, pulse	240	A
VCE(sat), typ @ VGE=15 V	1.45	V
Qg	105	nC

Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10 µs, D<0.01		±30	V
Continuous collector current1) , TC=25 °C	IC	80	A
Continuous collector current1) , TC=100 °C		60	A
Pulsed collector current2) , TC=25 °C	IC, pulse	240	A
Diode forward current1) , TC=25 °C	IF	80	A
Diode forward current1) , TC=100 °C		60	A
Diode pulsed current2) , TC=25 °C	IF, pulse	240	A
Power dissipation3) , TC=25 °C	PD	375	W
Power dissipation3) , TC=100 °C		150	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.4	°C/W
Diode thermal resistance, junction-case	RθJC	0.65	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj=25 °C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter    breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter  saturation voltage	VCE(sat)		1.45	1.75	V	VGE =15 V, IC=60 A Tvj=25 °C
			1.65		V	VGE =15 V, IC=60 A, Tvj=125 °C
			1.75			VGE =15 V, IC=60 A, Tvj=175 °C
Gate-emitter        threshold voltage	VGE(th)	3.0	4.0	5.0	V	VCE =VGE , ID =0.5 mA
Diode forward voltage	VF		2.2		V	VGE =0 V, IF =50 A Tvj=25 °C
			2.8			VGE =0 V, IF =50 A, Tvj=125 °C
			3.4			VGE =0 V, IF =50 A, Tvj=175 °C
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			50	μA	VCE =650 V, VGE =0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		5496		pF	VGE=0 V, VCE =25 V, ƒ=100 kHz
Output capacitance	Coes		317		pF
Reverse transfer capacitance	Cres		9.3		pF
Turn-on delay time	td(on)		54		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=60 A
Rise time	tr		92		ns
Turn-off delay time	td(off)		156		ns
Fall time	tf		83		ns
Turn-on energy	Eon		2.14		mJ
Turn-off energy	Eoff		0.82		mJ
Turn-on delay time	td(on)		49		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=30 A
Rise time	tr		42		ns
Turn-off delay time	td(off)		189		ns
Fall time	tf		24		ns
Turn-on energy	Eon		0.79		mJ
Turn-off energy	Eoff		0.62		mJ

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		105		nC	VGE =15 V, VCC=520 V, IC=60 A
Gate-emitter charge	Qge		42.5		nC
Gate-collector charge	Qgc		17.6		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		36		ns	VR=400 V, IF=60 A, diF/dt=500 A/μs Tvj =25 °C
Diode reverse recovery charge	Qrr		99		nC
Diode peak reverse recovery current	Irrm		5.4		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.






 

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