Pdfn5*6 Sfs04r02GF Vds-40V ID-200A RDS (ON) -1.5milliohm Qg-96.8nc Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: Pdfn5*6 SFS04R02GF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
FSMOS®   MOSFET is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth  series is specially designed to use in synchronous rectification power systems with low driving voltage.

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery

Applications
      PD charger
      Motor driver
      Switching voltage regulator
      DC-DC convertor
      Switched mode power supply

Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	40	V
ID, pulse	600	A
RDS(ON) max @ VGS =10V	1.5	mΩ
Qg	96.8	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	40	V
Gate source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	200	A
Pulsed drain current2) , TC=25 °C	ID, pulse	600	A
Continuous diode forward current1) , TC=25 °C	IS	200	A
Diode pulsed current2) , TC=25 °C	IS, Pulse	600	A
Power dissipation3) , TC=25 °C	PD	132	W
Single pulsed avalanche energy5)	EAS	200	mJ
Operation and storage temperature	Tstg ,Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.95	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	40			V	VGS =0 V, ID =250 pA
Gate threshold voltage	VGS(th)	1.0		2.5	V	VDS =VGS , ID =250 pA
Drain-source on-state resistance	RDS(ON)		1.25	1.50	mQ	VGS =10 V, ID=55 A
Drain-source on-state resistance	RDS(ON)		2.0	3.0	mQ	VGS =6 V, ID =55 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	pA	VDS =40 V, VGS =0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		6587		pF	VGS =0 V, VDS =20 V, ƒ=100 kHz
Output capacitance	Coss		2537		pF
Reverse transfer capacitance	Crss		178		pF
Turn-on delay time	td(on)		26.6		ns	VGS =10 V, VDS =20 V, RG=2 Ω, ID=20 A
Rise time	tr		9.3		ns
Turn-off delay time	td(off)		96		ns
Fall time	tf		39.3		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		96.8		nC	VGS =10 V, VDS =20 V, ID=20 A
Gate-source charge	Qgs		14.5		nC
Gate-drain charge	Qgd		18.4		nC
Gate plateau voltage	Vplateau		2.7		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS =0 V
Reverse recovery time	trr		66.2		ns	VR=20 V, IS=20 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		66.1		nC
Peak reverse recovery current	Irrm		2		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.

 

 

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