• To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT
  • To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT
  • To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT
  • To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT
  • To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT
  • To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT

To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT

Manufacturing Technology: Discrete Device
Material: Element Semiconductor
Type: N-type Semiconductor
Package: DIP(Dual In-line Package)
Signal Processing: Simulation
Application: Temperature Measurement
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Manufacturer/Factory, Trading Company

Basic Info.

Model NO.
OST75N65HSMF
Model
ULN2003
Batch Number
2010+
Brand
Orientalsemi
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month

Product Description

General Description
OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.


Features
 Advanced TGBTTM technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel diode


Applications
Induction converters
Uninterruptible power supplies

To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT

To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT

To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT


Supply Chain

To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT



Green Product Declaration

To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT
 
To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBTTo247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT





To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBTTo247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT
To247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBTTo247-F 800W Ost75n65hsmf 30V Trident Gate Bipolar Transistor IGBT

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Gold Member Since 2022

Suppliers with verified business licenses

Manufacturer/Factory, Trading Company
Registered Capital
10000000 RMB
Plant Area
501~1000 square meters